Datasheet HMC517 (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz |
| Páginas / Página | 6 / 4 — HMC517. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 17 - 26 GHz. Absolute … |
| Formato / tamaño de archivo | PDF / 565 Kb |
| Idioma del documento | Inglés |
HMC517. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 17 - 26 GHz. Absolute Maximum Ratings. Typical Supply Current vs. Vdd
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HMC517
v03.0917
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFIN)(Vdd = +3.0 Vdc) +2 dBm +2.5 61 Channel Temperature 175 °C +3.0 65 IP Continuous Pdiss (T= 85 °C) +3.5 69 H 1.65 W (derate 18 mW/°C above 85 °C) Note: Amplifier will operate over full voltage ranges shown C Thermal Resistance 54.6 °C/W above. - (channel to die bottom) S Storage Temperature -65 to +150 °C ELECTROSTATIC SENSITIVE DEVICE R Operating Temperature -55 to +85 °C OBSERVE HANDLING PRECAUTIONS ESD Sensitivity (HBM) Class 1A IE LIF P M
Outline Drawing
A E IS O N W LO
Die Packaging Information
[1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] Standard Alternate 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE GP-2 (Gel Pack) [2] 4. BACKSIDE METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 5. BOND PAD METALLIZATION: GOLD packaging dimensions. 6. BACKSIDE METAL IS GROUND. [2] For alternate packaging information contact Analog 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Devices, Inc. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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v03.0917
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 17 - 26 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFIN)(Vdd = +3.0 Vdc) +2 dBm +2.5 61 Channel Temperature 175 °C +3.0 65 IP Continuous Pdiss (T= 85 °C) +3.5 69 H 1.65 W (derate 18 mW/°C above 85 °C) Note: Amplifier will operate over full voltage ranges shown C Thermal Resistance 54.6 °C/W above. - (channel to die bottom) S Storage Temperature -65 to +150 °C ELECTROSTATIC SENSITIVE DEVICE R Operating Temperature -55 to +85 °C OBSERVE HANDLING PRECAUTIONS ESD Sensitivity (HBM) Class 1A IE LIF P M
Outline Drawing
A E IS O N W LO
Die Packaging Information
[1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] Standard Alternate 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE GP-2 (Gel Pack) [2] 4. BACKSIDE METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 5. BOND PAD METALLIZATION: GOLD packaging dimensions. 6. BACKSIDE METAL IS GROUND. [2] For alternate packaging information contact Analog 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Devices, Inc. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D
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