Datasheet HMC-ALH313 (Analog Devices)
| Fabricante | Analog Devices |
| Descripción | GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz |
| Páginas / Página | 6 / 1 — HMC-ALH313. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 27 - 33 GHz. Typical … |
| Formato / tamaño de archivo | PDF / 271 Kb |
| Idioma del documento | Inglés |
HMC-ALH313. GaAs HEMT MMIC LOW NOISE. AMPLIFIER, 27 - 33 GHz. Typical Applications. Features. Functional Diagram
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HMC-ALH313
v02.0209
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz
1
Typical Applications Features
This HMC-ALH313 is ideal for: Noise Figure: 3 dB IP • Point-to-Point Radios Gain: 20 dB H • Point-to-Multi-Point Radios P1dB Output Power: +12 dBm C • VSAT Supply Voltage: +2.5V @ 52 mA - • Test Equipment & Sensors Die Size: 1.80 x 0.73 x 0.1 mm RS • Military & Space IE IF L P M
Functional Diagram General Description
A E The HMC-ALH313 is a three stage GaAs MMIC HEMT Low Noise Amplifi er die which operates bet- IS ween 27 and 33 GHz. The amplifi er provides 20 dB O of gain, a 3 dB noise fi gure and +12 dBm of output N power at 1 dB gain compression while requiring only W 52 mA from a +2.5V supply voltage. This amplifi er die O is ideal for use as a LNA or driver amplifi er, and may L be easily integrated into Multi-Chip-Modules (MCMs) due to its small size (1.30 mm2) .
Electrical Specifi cations [1], T = +25° C, Vdd= 2.5V, Idd = 52mA [2] A
Parameter Min. Typ. Max. Units Frequency Range 27 - 33 GHz Gain 18 20 dB Gain Variation over Temperature 0.03 dB / °C Noise Figure 3 3.5 dB Input Return Loss 12 dB Output Return Loss 14 dB Output Power for 1 dB Compression 10 12 dBm Supply Current 52 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.3V) to achieve Idd = 52 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
1 - 150
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0209
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 27 - 33 GHz
1
Typical Applications Features
This HMC-ALH313 is ideal for: Noise Figure: 3 dB IP • Point-to-Point Radios Gain: 20 dB H • Point-to-Multi-Point Radios P1dB Output Power: +12 dBm C • VSAT Supply Voltage: +2.5V @ 52 mA - • Test Equipment & Sensors Die Size: 1.80 x 0.73 x 0.1 mm RS • Military & Space IE IF L P M
Functional Diagram General Description
A E The HMC-ALH313 is a three stage GaAs MMIC HEMT Low Noise Amplifi er die which operates bet- IS ween 27 and 33 GHz. The amplifi er provides 20 dB O of gain, a 3 dB noise fi gure and +12 dBm of output N power at 1 dB gain compression while requiring only W 52 mA from a +2.5V supply voltage. This amplifi er die O is ideal for use as a LNA or driver amplifi er, and may L be easily integrated into Multi-Chip-Modules (MCMs) due to its small size (1.30 mm2) .
Electrical Specifi cations [1], T = +25° C, Vdd= 2.5V, Idd = 52mA [2] A
Parameter Min. Typ. Max. Units Frequency Range 27 - 33 GHz Gain 18 20 dB Gain Variation over Temperature 0.03 dB / °C Noise Figure 3 3.5 dB Input Return Loss 12 dB Output Return Loss 14 dB Output Power for 1 dB Compression 10 12 dBm Supply Current 52 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (Typ. -0.3V) to achieve Idd = 52 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
1 - 150
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D