Datasheet HMC-ALH382 (Analog Devices) - 3

FabricanteAnalog Devices
DescripciónGaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz
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HMC-ALH382. GaAs HEMT LOW NOISE. AMPLIFIER, 57 - 65 GHz. Wideband Linear Gain. Wideband Input Return Loss

HMC-ALH382 GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz Wideband Linear Gain Wideband Input Return Loss

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HMC-ALH382
v03.1210
GaAs HEMT LOW NOISE AMPLIFIER, 57 - 65 GHz
1
Wideband Linear Gain Wideband Input Return Loss
ip h e - C is o w n o s - l
Wideband Output Return Loss
r ie lif p m A
Absolute Maximum Ratings
Drain Bias Voltage +5.5 Vdc Gate Bias Voltage -1 to +0.3 Vdc eleCTrosTATiC sensiTiVe DeViCe Channel Temperature 180 °C oBserVe hAnDlinG preCAUTions Thermal resistance 108.4 °C/w (channel to die bottom) Continuous pdiss (T= 85 °C) 0.87w (derate 9.2 mw/°C above 85 °C) rf input power -5 dBm storage Temperature -65 to +150 °C operating Temperature -55 to +85 °C Infor F m o ati ro p n f ruirc n e ish ,e d d e b l y iv Anealroyg a D n evidc ets oi s pblealic ev e e d otr o d b e e ras cc: urH at it e taitne d M relia ic bler. ow Ho a we vve er , C n o o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rporation, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
1 - 3
Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No O Ph rod n e e r : 7On 81- - 3 li 2 n 9-e 4 a 70t ww 0 • O w rd . e hi r ott nliite n .c e a o t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 pli co atri o ap n S p ups@ por h t it : Ptit hoen.c e o : 1 m -800-ANALOG-D