Datasheet HMC-ALH445 (Analog Devices) - 3

HMC-ALH445
v03.0410
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 18 - 40 GHz
1
On-Wafer P1dB vs. Frequency Absolute Maximum Ratings
Drain Bias Voltage +5.5 Vdc IP Drain Bias Current 60 mA H RF Input Power 10 dBm Thermal Resistance 201.2 °C/W (channel to die bottom) E - C Channel Temperature 180 °C Storage Temperature -65 to +150 °C IS Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE W NO OBSERVE HANDLING PRECAUTIONS O S - L
Outline Drawing
R IE IF L P M A
Die Packaging Information
[1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. Standard Alternate 2. TYPICAL BOND PAD IS .004” SQUARE. GP-1 (Gel Pack) [2] 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. [1] Refer to the “Packaging Information” section for die 5. BOND PAD METALLIZATION: GOLD. packaging dimensions. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [2] For alternate packaging information contact Hittite 7. OVERALL DIE SIZE ±.002” Microwave Corporation. Infor F m o ati r pr on fu irc n e, de ished b l y iv Anealroyg a D n evid to p ces is b lealic ev e o ed t rde o be ras cc: H urat it e taitne M d relia icr ble. ow Ho a we vve C er, n o o rpFo o rr aptriio c n e , 2 de0li A verlpha R y, and t o o ad, C place h o e rdlm er s s: fo A rd, MA 01 nalog Devic 8 e 2 s, 4Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
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Phone: 978-250-3343 Fax: 978-250-3373 O Ph rde one r O : 7 n 81- - 3 li 2 n 9-e a 470 t ww 0 • O w rd . e hi r ott nlite n .c e a o t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plicat r app ion Sups@ por h t it : Ptite hon .c e o : 1 m -800-ANALOG-D