Datasheet HMC-ALH508 (Analog Devices) - 3

HMC-ALH508
v02.0209
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
1
Absolute Maximum Ratings
Drain Bias Voltage +3 Vdc ip eleCTrosTATiC sensiTiVe DeViCe Gate Bias Voltage -1 to +0.3 Vdc h oBserVe hAnDlinG preCAUTions rf input power -5 dBm Thermal resistance 195.6 °C/w (channel to die bottom) e - C storage Temperature -65 to +150 °C is operating Temperature -55 to +85 °C o w n o s - l
Outline Drawing
r ie lif p m A noTes:
Die Packaging Information
[1] 1. All Dimensions Are in inChes [mm]. standard Alternate 2. TYpiCAl BonD pAD is .004” sQUAre. 3. BACKsiDe meTAlliZATion: GolD. Gp-1 (Gel pack) [2] 4. BACKsiDe meTAl is GroUnD. [1] Refer to the “Packaging Information” section for die 5. BonD pAD meTAlliZATion: GolD. packaging dimensions. 6. ConneCTion noT reQUireD for UnlABeleD BonD pADs. [2] For alternate packaging information contact Hittite 7. oVerAll Die siZe ±.002” Microwave Corporation. Infor F m o ati ro p n f ruirc n e ish ,e d d e b l y iv Anealroyg a D n evidc ets oi s pblealic ev e e d otr o d b e e ras cc: urH at it e taitne d M relia ic bler. ow Ho a we vve er , C n o o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rporation, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
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Phone: 978-250-3343 Fax: 978-250-3373 rights of third parties that may result from its use. Specifications subject to change without notice. No O Ph rod n e e r : 7On 81- - 3 li 2 n 9-e 4 a 70t ww 0 • O w rd . e hi r ott nliite n .c e a o t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 pli co atri o ap n S p ups@ por h t it : Ptit hoen.c e o : 1 m -800-ANALOG-D