Datasheet HMC1049 (Analog Devices) - 5
| Fabricante | Analog Devices |
| Descripción | GaAs pHEMT MMIC Low Noise Amplifier, 0.3 GHz to 20 GHz |
| Páginas / Página | 14 / 5 — Data Sheet. HMC1049. PIN CONFIGURATION AND FUNCTION DESCRIPTIONS. … |
| Revisión | B |
| Formato / tamaño de archivo | PDF / 272 Kb |
| Idioma del documento | Inglés |
Data Sheet. HMC1049. PIN CONFIGURATION AND FUNCTION DESCRIPTIONS. RFOUT/VDD 4. TOP VIEW. (Not to Scale). 1 RFIN. GGV
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Data Sheet HMC1049 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS 2 3 1 DD G V AC RFOUT/VDD 4 HMC1049 TOP VIEW (Not to Scale) 3 2 G G 1 RFIN GGV AC AC
3
7 6 5
00 56- 129 Figure 2. Pad Configuration
Table 3. Pad Function Descriptions Pad No. Function Description
1 RFIN RF Input. This pad is dc-coupled and matched to 50 Ω. 2 VDD Power Supply Voltage for the Amplifier. External bypass capacitors are required. 3 ACG1 Low Frequency Termination. Attach an external bypass capacitor (see Figure 34). 4 RFOUT/VDD RF Output/Alternate Power Supply Voltage for the Amplifier. An external bias tee is required when using Pin 4 as an alternative VDD. This pad is dc-coupled and matched to 50 Ω. 5, 6 ACG2, ACG3 Low Frequency Terminations. Attach external bypass capacitors (see Figure 34). 7 VGG Gate Control for Amplifier. Adjust to achieve IDD = 70 mA. Die Bottom GND Ground. Die bottom must be connected to RF/dc ground. Rev. B | Page 5 of 14 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Absolute Maximum Ratings ESD Caution PIN Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Application Circuit Assembly Diagram Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Storage Cleanliness Static Sensitivity Transients General Handling Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding Outline Dimensions Ordering Guide
Data Sheet HMC1049 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS 2 3 1 DD G V AC RFOUT/VDD 4 HMC1049 TOP VIEW (Not to Scale) 3 2 G G 1 RFIN GGV AC AC
3
7 6 5
00 56- 129 Figure 2. Pad Configuration
Table 3. Pad Function Descriptions Pad No. Function Description
1 RFIN RF Input. This pad is dc-coupled and matched to 50 Ω. 2 VDD Power Supply Voltage for the Amplifier. External bypass capacitors are required. 3 ACG1 Low Frequency Termination. Attach an external bypass capacitor (see Figure 34). 4 RFOUT/VDD RF Output/Alternate Power Supply Voltage for the Amplifier. An external bias tee is required when using Pin 4 as an alternative VDD. This pad is dc-coupled and matched to 50 Ω. 5, 6 ACG2, ACG3 Low Frequency Terminations. Attach external bypass capacitors (see Figure 34). 7 VGG Gate Control for Amplifier. Adjust to achieve IDD = 70 mA. Die Bottom GND Ground. Die bottom must be connected to RF/dc ground. Rev. B | Page 5 of 14 Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications Absolute Maximum Ratings ESD Caution PIN Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Application Circuit Assembly Diagram Mounting and Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Storage Cleanliness Static Sensitivity Transients General Handling Mounting Eutectic Die Attach Epoxy Die Attach Wire Bonding Outline Dimensions Ordering Guide