Datasheet HMC1127 (Analog Devices) - 6
| Fabricante | Analog Devices |
| Descripción | GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz |
| Páginas / Página | 16 / 6 — HMC1127. Data Sheet. PIN CONFIGURATION AND FUNCTION DESCRIPTIONS. VDD. … |
| Revisión | B |
| Formato / tamaño de archivo | PDF / 391 Kb |
| Idioma del documento | Inglés |
HMC1127. Data Sheet. PIN CONFIGURATION AND FUNCTION DESCRIPTIONS. VDD. RFOUT. TOP VIEW. (Not to Scale). RFIN 1. VGG1. VGG2
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HMC1127 Data Sheet PIN CONFIGURATION AND FUNCTION DESCRIPTIONS VDD 2 3 RFOUT HMC1127 TOP VIEW (Not to Scale) RFIN 1 5 4
106
VGG1 VGG2
13085- Figure 2. Pad Configuration
Table 6. Pad Function Descriptions Pad No. Mnemonic Description
1 RFIN RF Input. This pin is ac-coupled and matched to 50 Ω. 2 VDD Power Supply Voltage for the Amplifier, with Integrated RF Choke. Connect dc bias to this pad to provide drain current (IDD). 3 RFOUT RF Output. This pin is ac-coupled and matched to 50 Ω. 4 VGG2 Gate Control 2 for Amplifier. Attach bypass capacitors as shown in Figure 38. For nominal operation, apply 1.4 V to VGG2. 5 VGG1 Gate Control 1 for Amplifier. Attach bypass capacitors as shown in Figure 38. Adjust this pad to achieve IDD = 80 mA. Die Bottom GND Die bottom must be connected to RF/dc ground. Rev. B | Page 6 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY 2 GHz TO 8 GHz FREQUENCY RANGE 8 GHz TO 30 GHz FREQUENCY RANGE 30 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE ESD CAUTION INTERFACE SCHEMATICS MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS Handling Precautions Mounting Wire Bonding ASSEMBLY DIAGRAM ORDERING GUIDE
HMC1127 Data Sheet PIN CONFIGURATION AND FUNCTION DESCRIPTIONS VDD 2 3 RFOUT HMC1127 TOP VIEW (Not to Scale) RFIN 1 5 4
106
VGG1 VGG2
13085- Figure 2. Pad Configuration
Table 6. Pad Function Descriptions Pad No. Mnemonic Description
1 RFIN RF Input. This pin is ac-coupled and matched to 50 Ω. 2 VDD Power Supply Voltage for the Amplifier, with Integrated RF Choke. Connect dc bias to this pad to provide drain current (IDD). 3 RFOUT RF Output. This pin is ac-coupled and matched to 50 Ω. 4 VGG2 Gate Control 2 for Amplifier. Attach bypass capacitors as shown in Figure 38. For nominal operation, apply 1.4 V to VGG2. 5 VGG1 Gate Control 1 for Amplifier. Attach bypass capacitors as shown in Figure 38. Adjust this pad to achieve IDD = 80 mA. Die Bottom GND Die bottom must be connected to RF/dc ground. Rev. B | Page 6 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION REVISION HISTORY 2 GHz TO 8 GHz FREQUENCY RANGE 8 GHz TO 30 GHz FREQUENCY RANGE 30 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE ESD CAUTION INTERFACE SCHEMATICS MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS Handling Precautions Mounting Wire Bonding ASSEMBLY DIAGRAM ORDERING GUIDE