Datasheet HMC392A (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz |
| Páginas / Página | 6 / 4 — HMC392A. GaAs MMIC LOW NOISE. AMPLIFIER, 3.5 - 7.0 GHz. Absolute Maximum … |
| Formato / tamaño de archivo | PDF / 530 Kb |
| Idioma del documento | Inglés |
HMC392A. GaAs MMIC LOW NOISE. AMPLIFIER, 3.5 - 7.0 GHz. Absolute Maximum Ratings. Typical Supply Current vs. Vdd. Outline Drawing
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HMC392A
v02.0618
GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +7 Vdc Vdd (Vdc) Idd (mA) IP RF Input Power (RFIN)(Vdd = +5 Vdc) +20 dBm +4.5 57 H Channel Temperature 175 °C +5.0 59 Continuous Pdiss (T= 85 °C) +5.5 62 0.83 W (derate 9.3 mW/°C above 85 °C) (State 2 Depicted) Thermal Resistance E - C 108 °C/W (channel to die bottom) IS Storage Temperature -65 to +150 °C O Operating Temperature -55 to +85° C ESD Class 1A W N O ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS R - L
Outline Drawing
IE LIF P M A NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. ALL TOLERANCES ARE ±0.001 (0.025) Standard Alternate 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND WP-16 (Waffle Pack) [2] 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METALLIZATION: GOLD packaging dimensions. 7. BOND PAD METALLIZATION: GOLD [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
4
Application Support: Phone: 1-800-ANALOG-D
v02.0618
GaAs MMIC LOW NOISE AMPLIFIER, 3.5 - 7.0 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd) +7 Vdc Vdd (Vdc) Idd (mA) IP RF Input Power (RFIN)(Vdd = +5 Vdc) +20 dBm +4.5 57 H Channel Temperature 175 °C +5.0 59 Continuous Pdiss (T= 85 °C) +5.5 62 0.83 W (derate 9.3 mW/°C above 85 °C) (State 2 Depicted) Thermal Resistance E - C 108 °C/W (channel to die bottom) IS Storage Temperature -65 to +150 °C O Operating Temperature -55 to +85° C ESD Class 1A W N O ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS R - L
Outline Drawing
IE LIF P M A NOTES:
Die Packaging Information
[1] 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. ALL TOLERANCES ARE ±0.001 (0.025) Standard Alternate 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND WP-16 (Waffle Pack) [2] 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METALLIZATION: GOLD packaging dimensions. 7. BOND PAD METALLIZATION: GOLD [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com
4
Application Support: Phone: 1-800-ANALOG-D