Datasheet ADL9006CHIPS (Analog Devices)

2 GHz to 28 GHz, GaAs, pHEMT, MMIC, Low Noise Amplifier Data Sheet ADL9006CHIPS FEATURES GENERAL DESCRIPTION P1dB: 19 dBm typical at 2 GHz to 14 GHz
The ADL9006CHIPS is a gallium arsenide (GaAs),
at 2 GHz to 14 GHzGain: 15.5 dB typical at 14 GHz to 22 GHz
pseudomorphic high electron mobility transistor (pHEMT),
Noise figure: 2.2 dB at 2 GHz to 14 GHz
monolithic microwave integrated circuit (MMIC), low noise
Output IP3: 24 dBm typical at 2 GHz to 14 GHz
amplifier that operates from 2 GHz to 28 GHz. The amplifier
Power supply voltage: 5 V with a 55 mA total supply current
provides 15.5 dB of gain, 2.2 dB of noise figure, 24 dBm of
50 Ω matched input and output
output third-order intercept (IP3), 20 dBm of output saturated
APPLICATIONS
power (PSAT), and 19 dB of power output for 1 dB compression
Test instrumentation
(P1dB) while requiring a 55 mA power supply current (IDD) from
Microwave radios and very small aperture terminals (VSATs)
a 5 V total supply voltage. The ADL9006CHIPS is self biased with
Military and space
only a single positive supply needed to achieve an IDD of 55 mA. The ADL9006CHIPS amplifier input and output are internally matched to 50 Ω facilitating integration into multichip modules (MCMs).
FUNCTIONAL BLOCK DIAGRAM 5 ADL9006CHIPS VDD VGG2 4 6 3 7 RFOUT 2 8 RFIN NC 1 10 9
1 00 2- 2012 Figure 1.
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Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 2 GHz TO 14 GHz 14 GHz TO 22 GHz 22 GHz TO 28 GHz DC SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ELECTRONIC DISCHARGE (ESD) RATINGS ESD Ratings for ADL9006CHIPS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS SMALL SIGNAL RESPONSE LARGE SIGNAL RESPONSE THEORY OF OPERATION APPLICATIONS INFORMATION TYPICAL APPLICATION CIRCUIT MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICs Handling Precautions ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE