Datasheet HMC8412TCPZ-EP (Analog Devices) - 10

FabricanteAnalog Devices
DescripciónpHEMT 0.4 GHz TO 11 GHz LOW NOISE AMPLIFIER
Páginas / Página13 / 10 — DLA LAND AND MARITIME. COLUMBUS, OHIO. 16236. V62/21602
Formato / tamaño de archivoPDF / 224 Kb
Idioma del documentoInglés

DLA LAND AND MARITIME. COLUMBUS, OHIO. 16236. V62/21602

DLA LAND AND MARITIME COLUMBUS, OHIO 16236 V62/21602

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Device type 01 Case outline X Terminal number Terminal Description symbol 1 RBIAS Current mirror bias resistor. Use the RBIAS pin to set the quiescent current by connecting the external bias resistor. Refer to the manufacturer’s data sheet for the bias resistor connection and for recommended bias resistor values. See figure 3 for the interface schematic. 2 GND Ground. The GND pin must be connected to RF and dc ground. See figure 4 for the interface schematic. 3 RFIN RF input. The RFIN pin is ac-coupled and matched to 50 . See figure 5 for the interface schematic. 4 RFOUT RF output. The RFOUT pin is ac-coupled and matched to 50 . See figure 6 for the interface schematic. 5 GND Ground. The GND pin must be connected to RF and dc ground. See figure 4 for the interface schematic. 6 VDD Drain supply voltage for the amplifier. See figure 6 for the interface schematic. EPAD Exposed pad. The exposed pad must be connected to the RF and dc ground. FIGURE 2. Terminal connections.
DLA LAND AND MARITIME
SIZE CODE IDENT NO. DWG NO.
COLUMBUS, OHIO A 16236 V62/21602
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