Datasheet HMC8412 (Analog Devices)
| Fabricante | Analog Devices |
| Descripción | Low Noise Amplifier, 0.4 GHz to 11 GHz |
| Páginas / Página | 18 / 1 — Low Noise Amplifier,. 0.4 GHz to 11 GHz. Data Sheet. HMC8412. FEATURES. … |
| Formato / tamaño de archivo | PDF / 434 Kb |
| Idioma del documento | Inglés |
Low Noise Amplifier,. 0.4 GHz to 11 GHz. Data Sheet. HMC8412. FEATURES. FUNCTIONAL BLOCK DIAGRAM. Low noise figure: 1.4 dB typical
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Low Noise Amplifier, 0.4 GHz to 11 GHz Data Sheet HMC8412 FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.4 dB typical HMC8412 Single positive supply (self biased) R 1 6 BIAS VDD High gain: ≤15.5 dB typical GND 2 5 GND High OIP3: ≤33 dBm typical
001
RF 3 4 IN RFOUT RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP
23882- Figure 1.
APPLICATIONS Test instrumentation Telecommunications Military radar and communication Electronic warfare Aerospace GENERAL DESCRIPTION
The HMC8412 is a gallium arsenide (GaAs), monolithic (LO) driver for many Analog Devices, Inc., balanced, inphase microwave integrated circuit (MMIC), pseudomorphic high and quadrature (I/Q) or image rejection mixers. electron mobility transistor (pHEMT), low noise wideband The HMC8412 also features inputs and outputs that are amplifier that operates from 0.4 GHz to 11 GHz. internal y matched to 50 Ω, making the device ideal for surface- The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical mount technology (SMT)-based, high capacity microwave radio noise figure, and a typical output third-order intercept (OIP3) of applications. ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The HMC8412 is housed in an RoHS-compliant, 2 mm × The saturated output power (PSAT) of ≤20.5 dBm typical enables 2 mm, 6-lead LFCSP. the low noise amplifier (LNA) to function as a local oscillator
Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. No license is granted by implication or otherwise under any patent or patent rights of Analog Tel: 781.329.4700 ©2020 Analog Devices, Inc. All rights reserved. Devices. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications 0.4 GHz to 3 GHz Frequency Range 3 GHz to 9 GHz Frequency Range 9 GHz to 11 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance Electrostatic Discharge (ESD) Ratings ESD Ratings for HMC8412 ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Recommended Bias Sequencing Power-Up Sequence Power-Down Sequence Outline Dimensions Ordering Guide
Low Noise Amplifier, 0.4 GHz to 11 GHz Data Sheet HMC8412 FEATURES FUNCTIONAL BLOCK DIAGRAM Low noise figure: 1.4 dB typical HMC8412 Single positive supply (self biased) R 1 6 BIAS VDD High gain: ≤15.5 dB typical GND 2 5 GND High OIP3: ≤33 dBm typical
001
RF 3 4 IN RFOUT RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP
23882- Figure 1.
APPLICATIONS Test instrumentation Telecommunications Military radar and communication Electronic warfare Aerospace GENERAL DESCRIPTION
The HMC8412 is a gallium arsenide (GaAs), monolithic (LO) driver for many Analog Devices, Inc., balanced, inphase microwave integrated circuit (MMIC), pseudomorphic high and quadrature (I/Q) or image rejection mixers. electron mobility transistor (pHEMT), low noise wideband The HMC8412 also features inputs and outputs that are amplifier that operates from 0.4 GHz to 11 GHz. internal y matched to 50 Ω, making the device ideal for surface- The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical mount technology (SMT)-based, high capacity microwave radio noise figure, and a typical output third-order intercept (OIP3) of applications. ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The HMC8412 is housed in an RoHS-compliant, 2 mm × The saturated output power (PSAT) of ≤20.5 dBm typical enables 2 mm, 6-lead LFCSP. the low noise amplifier (LNA) to function as a local oscillator
Rev. 0 Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. No license is granted by implication or otherwise under any patent or patent rights of Analog Tel: 781.329.4700 ©2020 Analog Devices, Inc. All rights reserved. Devices. Trademarks and registered trademarks are the property of their respective owners. Technical Support www.analog.com
Document Outline Features Applications Functional Block Diagram General Description Revision History Specifications 0.4 GHz to 3 GHz Frequency Range 3 GHz to 9 GHz Frequency Range 9 GHz to 11 GHz Frequency Range Absolute Maximum Ratings Thermal Resistance Electrostatic Discharge (ESD) Ratings ESD Ratings for HMC8412 ESD Caution Pin Configuration and Function Descriptions Interface Schematics Typical Performance Characteristics Theory of Operation Applications Information Recommended Bias Sequencing Power-Up Sequence Power-Down Sequence Outline Dimensions Ordering Guide