Datasheet HMC498 (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | GaAs pHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz |
| Páginas / Página | 6 / 4 — HMC498. GaAs pHEMT MMIC. POWER AMPLIFIER, 17 - 24 GHz. Absolute Maximum … |
| Formato / tamaño de archivo | PDF / 402 Kb |
| Idioma del documento | Inglés |
HMC498. GaAs pHEMT MMIC. POWER AMPLIFIER, 17 - 24 GHz. Absolute Maximum Ratings. Typical Supply Current vs. Vdd. Outline Drawing
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HMC498
v03.0713
GaAs pHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5V Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -4 to 0V +4.5 241 RF Input Power (RFIN)(Vdd = +5V) +10 dBm +5.0 250 IP Channel Temperature 175 °C H +5.5 258 Continuous Pdiss (T= 85 °C) 1.92 W +3.0 240 (derate 21.4mW/°C above 85 °C) +3.5 250 Thermal Resistance 46.8 °C/W +4.0 259 S - C (channel to die bottom) R Storage Temperature -65 to +150 °C Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 250mA at +5V and +3.5V. Operating Temperature -55 to +85 °C IE ESD Sensitivity (HBM) Class 1A LIF ELECTROSTATIC SENSITIVE DEVICE P OBSERVE HANDLING PRECAUTIONS M
Outline Drawing
R A E W O R & P A E IN L
Die Packaging Information
NOTES: [1] 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” Standard Alternate 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD GP-2 (Gel Pack) [2] 5. BOND PAD METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND. packaging dimensions. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [2] For alternate packaging information contact Hittite Microwave Corporation. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
4
Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D
v03.0713
GaAs pHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5V Vdd (V) Idd (mA) Gate Bias Voltage (Vgg) -4 to 0V +4.5 241 RF Input Power (RFIN)(Vdd = +5V) +10 dBm +5.0 250 IP Channel Temperature 175 °C H +5.5 258 Continuous Pdiss (T= 85 °C) 1.92 W +3.0 240 (derate 21.4mW/°C above 85 °C) +3.5 250 Thermal Resistance 46.8 °C/W +4.0 259 S - C (channel to die bottom) R Storage Temperature -65 to +150 °C Note: Amplifier will operate over full voltage ranges shown above. Vgg adjusted to achieve Idd= 250mA at +5V and +3.5V. Operating Temperature -55 to +85 °C IE ESD Sensitivity (HBM) Class 1A LIF ELECTROSTATIC SENSITIVE DEVICE P OBSERVE HANDLING PRECAUTIONS M
Outline Drawing
R A E W O R & P A E IN L
Die Packaging Information
NOTES: [1] 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” Standard Alternate 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD GP-2 (Gel Pack) [2] 5. BOND PAD METALLIZATION: GOLD [1] Refer to the “Packaging Information” section for die 6. BACKSIDE METAL IS GROUND. packaging dimensions. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. [2] For alternate packaging information contact Hittite Microwave Corporation. Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com
4
Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 o plica r a tio p n S p u s p @ po h rt itt : P ite ho . n c e o : 1m -800-ANALOG-D