Datasheet HMC499 (Analog Devices) - 3

HMC499
v03.0908
GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz Output IP3 vs. Temperature Noise Figure vs. Temperature
40 12 10 36 +25 C 3 +85 C 8 -55 C 32 GURE (dB) 6 IP3 (dBm) 28 SE FI IP 4 +25 C NOI +85 C H 24 -55 C 2 20 0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 20 21 22 23 24 25 26 27 28 29 30 31 32 33 S - C FREQUENCY (GHz) FREQUENCY (GHz) R IE
Gain & Power vs.
IF
Supply Voltage@ 30 GHz, Idd= 200 mA Reverse Isolation vs. Temperature
L 26 0 P M -10 22 -20 +25 C R A Bm), Psat (dBm) +85 C -55 C E 18 -30 W ISOLATION (dB) -40 Gain O 14 P1dB Psat -50 GAIN (dB), P1dB (d 10 -60 3 3.5 4 4.5 5 5.5 20 21 22 23 24 25 26 27 28 29 30 31 32 33 R & P Vdd (V) FREQUENCY (GHz) A E IN
Power Compression @ 22 GHz Power Compression @ 30 GHz
L 28 28 24 24 Pout (dBm) Pout (dBm) Gain (dB) Gain (dB) 20 PAE (%) 20 PAE (%) 16 16 12 12 8 8 Pout (dBm), GAIN (dB), PAE (%) 4 Pout (dBm), GAIN (dB), PAE (%) 4 0 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 INPUT POWER (dBm) INPUT POWER (dBm) Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 58
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