Datasheet HMC594 (Analog Devices) - 3

FabricanteAnalog Devices
DescripciónGaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz
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HMC594. GaAs pHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. P1dB vs. Temperature. Psat vs. Temperature. Output IP3 vs. Temperature

HMC594 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz P1dB vs Temperature Psat vs Temperature Output IP3 vs Temperature

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HMC594
v01.0312
GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz P1dB vs. Temperature Psat vs. Temperature
26 26 25 25 ip 24 24 H 23 23 22 22 (dBm) 21 (dBm) 21 e - C 20 P1dB Psat 20 is 19 +25C 19 +25C +85C +85C 18 -40C 18 -40C o 17 17 16 16 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 w N FREQUENCY (GHz) FREQUENCY (GHz) lo
Output IP3 vs. Temperature Power Compression @ 3 GHz
s - r 40 25 38 ie (%) 36 20 Pout Gain PAE 34 PAE lif 32 15 (dB), p (dBm) 30 +25C m +85C GAIN 28 -40C OIP3 10 A 26 (dBm), 24 5 Pout 22 20 0 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 FREQUENCY (GHz) INPUT POWER (dBm)
Gain, Noise Figure & Power vs. Supply Voltage @ 3 GHz
) m 40 3 (dB 35 IP , O 30 Gain m) P1dB Psat 25 OIP3 sat (dB P ), 20 (dBm 15 P1dB 10 (dB), 5 5.5 6 6.5 GAIN Vdd SUPPLY VOLTAGE (Vdc) Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd ho e ne r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o tniltie n .c e ao t m
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