Datasheet HMC609LC4 (Analog Devices)
| Fabricante | Analog Devices |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz |
| Páginas / Página | 8 / 1 — HMC609LC4. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Typical … |
| Formato / tamaño de archivo | PDF / 470 Kb |
| Idioma del documento | Inglés |
HMC609LC4. GaAs PHEMT MMIC LOW NOISE. AMPLIFIER, 2 - 4 GHz. Typical Applications. Features. Functional Diagram. General Description
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HMC609LC4
v03.0514
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Typical Applications Features
The HMC609LC4 is ideal for: Excellent Gain Flatness: ±0.4 dB T • Fixed Microwave High Gain: 20 dB M • Test & Measurement Equipment Low Noise Figure: 3.5 dBm - S • Radar & Sensors Output IP3: +36.5 dBm E • Military & Space 50 Ohm Matched & DC Blocked RF I/Os IS RoHS Compliant 4 x 4 mm SMT Package O W N
Functional Diagram General Description
O The HMC609LC4 is a GaAs PHEMT MMIC Low Noise Amplifier (LNA) which operates from 2 to 4 GHz. The HMC609LC4 features extremely flat performance S - L characteristics including 20 dB of small signal gain, 3.5 R dB of noise figure and output IP3 of +36.5 dBm across IE the operating band. This 50 Ohm matched amplifier does not require any external matching components. LIF The HMC609LC4 is compatible with high volume P surface mount manufacturing techniques, and the RF M I/Os are DC blocked for further ease of integration. A
Electrical Specifications, T = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170 mA [1] A
Parameter Min. Typ. Max. Units Frequency Range 2 - 4 GHz Gain 17 20 dB Gain Variation Over Temperature 0.015 0.02 dB/ °C Noise Figure 3.5 5.5 dB Input Return Loss 17 dB Output Return Loss 15 dB Output Power for 1 dB Compression (P1dB) 18.5 21.5 dBm Saturated Output Power (Psat) 23 dBm Output Third Order Intercept (IP3) 36.5 dBm Supply Current (Idd1 + Idd2) 170 220 mA Adjust Vgg between -1.5V to -0.5V (Typical -0.9V) to achieve total drain bias of 170mA I F nf o or r p mati r o in cfe ur , d nish e e l d iv b e y r A y a nalo n g d t Devi o p ces i la s c bele o ieve rd d t e o rbs e : H acc iutrtatite e M and ic reli rao bl w e. a H v o e C wever o , nrp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rd Phoe n r O e: 7 n- 81-li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 o pplic r a atio pp n S s u @ p h por ittti : Pte ho.c n o e m : 1-800-ANALOG-D
v03.0514
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Typical Applications Features
The HMC609LC4 is ideal for: Excellent Gain Flatness: ±0.4 dB T • Fixed Microwave High Gain: 20 dB M • Test & Measurement Equipment Low Noise Figure: 3.5 dBm - S • Radar & Sensors Output IP3: +36.5 dBm E • Military & Space 50 Ohm Matched & DC Blocked RF I/Os IS RoHS Compliant 4 x 4 mm SMT Package O W N
Functional Diagram General Description
O The HMC609LC4 is a GaAs PHEMT MMIC Low Noise Amplifier (LNA) which operates from 2 to 4 GHz. The HMC609LC4 features extremely flat performance S - L characteristics including 20 dB of small signal gain, 3.5 R dB of noise figure and output IP3 of +36.5 dBm across IE the operating band. This 50 Ohm matched amplifier does not require any external matching components. LIF The HMC609LC4 is compatible with high volume P surface mount manufacturing techniques, and the RF M I/Os are DC blocked for further ease of integration. A
Electrical Specifications, T = +25° C, Vdd1 = Vdd2 = +6V, Idd1 + Idd2 = 170 mA [1] A
Parameter Min. Typ. Max. Units Frequency Range 2 - 4 GHz Gain 17 20 dB Gain Variation Over Temperature 0.015 0.02 dB/ °C Noise Figure 3.5 5.5 dB Input Return Loss 17 dB Output Return Loss 15 dB Output Power for 1 dB Compression (P1dB) 18.5 21.5 dBm Saturated Output Power (Psat) 23 dBm Output Third Order Intercept (IP3) 36.5 dBm Supply Current (Idd1 + Idd2) 170 220 mA Adjust Vgg between -1.5V to -0.5V (Typical -0.9V) to achieve total drain bias of 170mA I F nf o or r p mati r o in cfe ur , d nish e e l d iv b e y r A y a nalo n g d t Devi o p ces i la s c bele o ieve rd d t e o rbs e : H acc iutrtatite e M and ic reli rao bl w e. a H v o e C wever o , nrp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rd Phoe n r O e: 7 n- 81-li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 o pplic r a atio pp n S s u @ p h por ittti : Pte ho.c n o e m : 1-800-ANALOG-D