Datasheet HMC-ABH209 (Analog Devices)
| Fabricante | Analog Devices |
| Descripción | GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz |
| Páginas / Página | 6 / 1 — HMC-ABH209. Gaas HEMT MMIC MEDIUM POWER. AMPLIFIER, 55 - 65 GHz. Typical … |
| Formato / tamaño de archivo | PDF / 267 Kb |
| Idioma del documento | Inglés |
HMC-ABH209. Gaas HEMT MMIC MEDIUM POWER. AMPLIFIER, 55 - 65 GHz. Typical Applications. Features. Functional Diagram
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HMC-ABH209
v03.0714
Gaas HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz Typical Applications Features
This HMC-ABH209 is ideal for: Output IP3: +25 dBm IP • Short Haul / High Capacity Links P1dB: +16 dBm H • Wireless LAN Bridges Gain: 13 dB • Military & Space Supply Voltage: +5V R - C 50 Ohm Matched Input/Output IE Die Size: 2.2 x 1.22 x 0.1 mm LIF P M
Functional Diagram General Description
The HMC-ABH209 is a high dynamic range, two R A E stage GaAs HEMT MMIC Medium Power Amplifier which operates between 55 and 65 GHz. The HMC- W ABH209 provides 13 dB of gain, and an output power O of +16 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metal ized and the amplifier device is ful y R & P passivated for reliable operation. The HMC-ABH209 A GaAs HEMT MMIC Medium Power Amplifier is E compatible with conventional die attach methods, as wel as thermocompression and thermosonic LIN wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Electrical Specifications, T = +25 °C, Vdd = 5V, Idd = 80mA
[2]
A
Parameter Min. Typ. Max. Units Frequency Range 55 - 65 GHz Gain 12 13 dB Input Return Loss 13 dB Output Return Loss 17 dB Output Power for 1 dB Compression (P1dB) 16 dBm Output Third Order Intercept (IP3) 25 dBm Saturated Output Power (Psat) 18 dBm Supply Current (Idd) 80 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (typ -0.3V) to achieve Iddtotal = 80mA Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 p o lica rti a o p n S p u s p @ po h rt itt : P ite ho . n c e om : 1-800-ANALOG-D
v03.0714
Gaas HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz Typical Applications Features
This HMC-ABH209 is ideal for: Output IP3: +25 dBm IP • Short Haul / High Capacity Links P1dB: +16 dBm H • Wireless LAN Bridges Gain: 13 dB • Military & Space Supply Voltage: +5V R - C 50 Ohm Matched Input/Output IE Die Size: 2.2 x 1.22 x 0.1 mm LIF P M
Functional Diagram General Description
The HMC-ABH209 is a high dynamic range, two R A E stage GaAs HEMT MMIC Medium Power Amplifier which operates between 55 and 65 GHz. The HMC- W ABH209 provides 13 dB of gain, and an output power O of +16 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metal ized and the amplifier device is ful y R & P passivated for reliable operation. The HMC-ABH209 A GaAs HEMT MMIC Medium Power Amplifier is E compatible with conventional die attach methods, as wel as thermocompression and thermosonic LIN wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Electrical Specifications, T = +25 °C, Vdd = 5V, Idd = 80mA
[2]
A
Parameter Min. Typ. Max. Units Frequency Range 55 - 65 GHz Gain 12 13 dB Input Return Loss 13 dB Output Return Loss 17 dB Output Power for 1 dB Compression (P1dB) 16 dBm Output Third Order Intercept (IP3) 25 dBm Saturated Output Power (Psat) 18 dBm Supply Current (Idd) 80 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -1V to +0.3V (typ -0.3V) to achieve Iddtotal = 80mA Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e A r n y a alog n D d t evic o p es is la beclie o eved rd to ebre sa: H ccur iattti e tae M nd re ilicarbloew . H a o ve C wever, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No P rd hone e r O : 7 n 81- -3li 2n 9 e a -47 t w 0 w 0 • O w rd .h e it r o t niltie n .c e ao t m
1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. www.analog.com Application Support: Pho Trademarks and registered trademarks are the property of their respective owners. ne: 978-250-33 A 4 p 3 p o lica rti a o p n S p u s p @ po h rt itt : P ite ho . n c e om : 1-800-ANALOG-D