Datasheet HMC-APH633 (Analog Devices)
| Fabricante | Analog Devices |
| Descripción | GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 -76 GHz |
| Páginas / Página | 6 / 1 — HMC-APH633. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 71 - 76 GHz. Typical … |
| Formato / tamaño de archivo | PDF / 272 Kb |
| Idioma del documento | Inglés |
HMC-APH633. GaAs HEMT MMIC MEDIUM POWER. AMPLIFIER, 71 - 76 GHz. Typical Applications. Features. Functional Diagram
Línea de modelo para esta hoja de datos
Versión de texto del documento
HMC-APH633
v03.0209
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Typical Applications Features
This HMC-APH633 is ideal for: Gain: 13 dB • Short Haul / High Capacity Links P1dB: +20 dBm 3 • Wireless LAN Bridges Supply Voltage: +4V • Military & Space 50 Ohm Matched Input/Output • E-Band Communication Systems Die Size: 2.47 x 1.60 x 0.05 mm IP H S - C
Functional Diagram General Description
R The HMC-APH633 is a two stage GaAs HEMT MMIC IE Medium Power Amplifi er which operates between IF 71 and 76 GHz. The HMC-APH633 provides 13 dB L of gain, and an output power of +20 dBm at 1 dB P compression from a +4V supply voltage. All bond M pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable R A operation. The HMC-APH633 GaAs HEMT MMIC E Medium Power Amplifi er is compatible with conven- W tional die attach methods, as well as thermocomp- O ression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF R & P probes. A E IN
Electrical Specifi cations, T = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240 mA
[2] L
A
Parameter Min. Typ. Max. Units Frequency Range 71-76 GHz Gain 9 13 dB Input Return Loss 8 dB Output Return Loss 10 dB Output power for 1dB Compression (P1dB) 20 dBm Supply Current (Idd1+Idd2) 240 mA [1] Unless otherwise indicated, all measurements are from probed die. [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.1V) to achieve Idd = 240 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 220
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v03.0209
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 76 GHz Typical Applications Features
This HMC-APH633 is ideal for: Gain: 13 dB • Short Haul / High Capacity Links P1dB: +20 dBm 3 • Wireless LAN Bridges Supply Voltage: +4V • Military & Space 50 Ohm Matched Input/Output • E-Band Communication Systems Die Size: 2.47 x 1.60 x 0.05 mm IP H S - C
Functional Diagram General Description
R The HMC-APH633 is a two stage GaAs HEMT MMIC IE Medium Power Amplifi er which operates between IF 71 and 76 GHz. The HMC-APH633 provides 13 dB L of gain, and an output power of +20 dBm at 1 dB P compression from a +4V supply voltage. All bond M pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable R A operation. The HMC-APH633 GaAs HEMT MMIC E Medium Power Amplifi er is compatible with conven- W tional die attach methods, as well as thermocomp- O ression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF R & P probes. A E IN
Electrical Specifi cations, T = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 240 mA
[2] L
A
Parameter Min. Typ. Max. Units Frequency Range 71-76 GHz Gain 9 13 dB Input Return Loss 8 dB Output Return Loss 10 dB Output power for 1dB Compression (P1dB) 20 dBm Supply Current (Idd1+Idd2) 240 mA [1] Unless otherwise indicated, all measurements are from probed die. [2] Adjust Vgg1=Vgg2 between -1V to +0.3V (typ. -0.1V) to achieve Idd = 240 mA total Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
3 - 220
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D