Datasheet HMC-APH634 (Analog Devices) - 6

HMC-APH634
v01.0713
GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 81 - 86 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectical y or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). IP H
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage:
All bare die are placed in either Waffle or Gel based ESD protec- tive containers, and then sealed in an ESD protective bag for shipment. S - C Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. R
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning sys- IE tems.
Static Sensitivity:
Fol ow ESD precautions to protect against ESD strikes. LIF P
Transients:
Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. M
General Handling:
Handle the chip along the edges with a vacuum col et or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum col et, tweezers, or fingers. R A
Mounting
E The chip is back-metal ized and can be die mounted with AuSn eutectic preforms or with electrical y conductive epoxy. W The mounting surface should be clean and flat. O Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. R & P Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fil et is observed A around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. E
Wire Bonding
LIN RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonical y bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonical y bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). Information furnish F e o d r p by A rnic alo e g , d Devi ecleis vie s rby eli, a eve nd t d to b o p e a l cc a ur c at e o e an r d d releiars ble , p . Ho le we a ve sr, e c no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ontact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 2 Elizabeth Drive, Chelmsford, MA 01824 Phon rights of third parties that may result from its use. Specifications subject to change without notice. No e: 9 Ph 7 o 8 ne -2 : 7 50 81- - 3 3 2 3 9- 4 4 3 F 70 a 0 • Ox: 9 rde 7 r o 8 nli-2 n 5 e a0 t -33 ww 7 w. 3 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. analog.com
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