Datasheet HMC633 (Analog Devices)

HMC633
v02.0517
GaAs PHEMT MMIC DRIVER AMPLIFIER, 5 - 17 GHz Typical Applications Features
2 The HMC633 is ideal for: Gain: 29 dB • Point-to-Point Radios P1dB: +23 dBm • Point-to-Multi-Point Radios & VSAT Output IP3: +30 dBm IP • LO Driver for Mixers Saturated Power: +24 dBm @ 27% PAE H • Military & Space Supply Voltage: +5V @ 180 mA 50 Ohm Matched Input/Output K - C Die Size: 2.07 x 0.93 x 0.1 mm C LO
Functional Diagram General Description
The HMC633 is a GaAs MMIC PHEMT Driver IN B Amplifier die which operates between 5 and 17 GHz. A The amplifier provides up to 31 dB of gain, +30 dBm Output IP3, and +23 dBm of output power at 1 dB gain compression, while requiring 180 mA from a +5V supply. The HMC633 is an ideal driver amplifier for R & G E microwave radio applications from 5 to 17 GHz, and may also be biased at +5V, 130 mA to provide 2 dB IV lower gain with improved PAE. The HMC633 amplifier R I/O’s are DC blocked and internal y matched to 50 Ohms facilitating easy integration into Multi-Chip- Modules (MCMs). All data is taken with die connected S - D at input and output RF ports via one 1 mil wedge bond R with minimal length of 0.31 mm (12 mils). IE LIF P
Electrical Specifications, T = +25° C, Vdd1, Vdd2, Vdd3, Vdd4 = 5V, Idd = 180 mA[1] A
M Parameter Min. Typ. Max. Min. Typ. Max. Units A Frequency Range 5 - 9 9 - 17 GHz Gain 27 31 26 29 dB Gain Variation Over Temperature 0.035 0.044 0.040 0.050 dB/ °C Input Return Loss 14 16 dB Output Return Loss 15 12 dB Output Power for 1 dB Compression (P1dB) 21 23 21 23 dBm Saturated Output Power (Psat) 24 23.5 dBm Output Third Order Intercept (IP3) 30 30 dBm Noise Figure 9 7 dB Supply Current (Idd= Idd1 + Idd2 + Idd3 + Idd4) 180 180 mA
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Adjust Vgg between -2 to 0V to achieve Idd = 180mA Typical In F fo o r r p mati r o ic n f e ur, d nis e heliv d e b r y y A , a nal n o d t g D o p evicela s ice o s beli red v e e r d s t : A o b n e a aclo cu g D rate e a v n ic d r e elisa, I blen . c H .o, O wev n ere T , n e o ch Fn o olo r p g ri y W ce a , d y el , P ive .rO y . B , an ox 9 d t 1 o p0 l 6 ac, No e or rdw erosod : A, M nal A 0 o 2 g D 0 ev6i2 c - e 9 s 1 , I0 n 6 c., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
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rights of third parties that may result from its use. Sp P ec h ifi o c n ati e o : 78 ns su 1 bj - e 3 c 2 t t 9 o c-h4 a 7 n 0 g 0 • O e withou rd t noe ti r o ce n . N l o ine at www.analog.com license is granted by implication or otherwise under any p A at p enpl t oica r pa ttieo n n S t righ u t p s o po f Anrt al : P o h g D o evince e : 1 s. -8 P0h0o-nA e N : 7AL 81-O 3 G 29 --D 4700 • Order online at www.analog.com Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications Performance Characteristics Broadband Gain & Return Loss Gain vs. Temperature Input Return Loss vs. Temperature Output Return Loss vs. Temperature P1dB vs. Temperature Psat vs. Temperature Power Compression @ 10 GHz Power Compression @ 17 GHz Output IP3 vs. Temperature @ Pin = -15 dBm Noise Figure vs. Temperature Gain & Power vs. Supply Voltage @ 10 GHz Reverse Isolation vs. Temperature Gain, Power & Output IP3 vs. Gate Voltage @ 10 GHz Absolute Maximum Ratings Typical Supply Current vs. Vdd Outline Drawing Die Packaging Information Pad Descriptions Assembly Diagram Mounting & Bonding Techniques for Millimeterwave GaAs MMICs Handling Precautions Mounting Wire Bonding