HMC634LC4 v03.0514 GaAs PHEMT MMIC DRIVERAMPLIFIER, 5 - 20 GHzGain, Power & Output IP3vs. Gate Voltage @ 12.5 GHzAbsolute Maximum Ratings 35 210 Drain Bias Voltage (Vdd1, Vdd2, Vdd3, +5.5 Vdc Vdd4) (dBm) Idd Gate Bias Voltage (Vgg) -3 to 0 Vdc T IP3 30 180 RF Input Power (RFIN)(Vdd = +5 Vdc) +10 dBm M (dBm), Idd Channel Temperature 175 °C Psat 25 150 (mA) Continuous Pdiss (T= 85 °C) ), 1 W (derate 11.17 mW/°C above 85 °C) S - S (dBm Thermal Resistance 20 120 89.46 °C/W R Gain (channel to package bottom) P1dB P1dB Psat Storage Temperature -65 to +150 °C IE IP3 (dB), 15 90 Operating Temperature -40 to +85 °C GAIN -0.88 -0.84 -0.8 -0.76 -0.72 LIF Vgg (V) P M ELECTROSTATIC SENSITIVE DEVICE Typical Supply Current vs. Vdd OBSERVE HANDLING PRECAUTIONS K A Vdd (V) Idd (mA) C 4.5 177 LO 5.0 180 5.5 183 Note: Amplifier will operate over full voltage ranges shown above IN B A R & G E IV R D I F nf o or r p mati r o in cfe ur , d nish e e l d iv b e y r A y a nalo n g d t Devi o p ces i la s c bele o ieve rd d t e o rbs e : H acc iutrtatite e M and ic reli rao bl w e. a H v o e C wever o , nrp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 2 Elizabeth Drive, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rd Phoe n r O e: 7 n- 81-li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com 4 Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 o pplic r a atio pp n S s u @ p h por ittti : Pte ho.c n o e m : 1-800-ANALOG-D