Datasheet HMC1082CHIP (Analog Devices) - 5

Data Sheet HMC1082CHIP ABSOLUTE MAXIMUM RATINGS Table 4. THERMAL RESISTANCE Parameter Rating
θJC is the junction to case thermal resistance, channel to bottom Drain Bias Voltage (VDD) 5.5 V dc of die. Radio Frequency (RF) Input Power (RFIN) 20 dBm Continuous Power Dissipation (P
Table 5. Thermal Resistance
DISS), T = 1.84 W 85°C (Derate 20.4 mW/°C Above 85°C)
Package Type θJC Unit
Channel Temperature 175°C C-6-13 48.9 °C/W Storage Temperature Range −65°C to +150°C Operating Temperature Range −55°C to +85°C
ESD CAUTION
Junction Temperature to Maintain 175°C 1,000,000 Hour Mean Time to Failure (MTTF) Nominal Junction Temperature (T = 138.8°C 85°C, VDD = 5 V, IDQ = 220 mA) ESD Sensitivity Human Body Model (HBM) Class 1A (passed 250 V) Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Rev. B | Page 5 of 15 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 5.5 GHz TO 7 GHz FREQUENCY RANGE 7 GHz TO 15.5 GHz FREQUENCY RANGE 15.5 GHz TO 18 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION APPLICATIONS INFORMATION RECOMMENDED BIAS SEQUENCING MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE