Datasheet RZM001P02 (Rohm) - 2
| Fabricante | Rohm |
| Descripción | Pch -20V -100mA Small Signal MOSFET |
| Páginas / Página | 12 / 2 — RZM001P02. Thermal resistance. Electrical characteristics (Ta = 25°C). … |
| Formato / tamaño de archivo | PDF / 1.4 Mb |
| Idioma del documento | Inglés |
RZM001P02. Thermal resistance. Electrical characteristics (Ta = 25°C). 20160629 - Rev.001
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RZM001P02
Datasheet l
Thermal resistance
Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - ambient R *2 thJA - - 833 ℃/W l
Electrical characteristics (Ta = 25°C)
Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V voltage (BR)DSS VGS = 0V, ID = -1mA -20 - - V Breakdown voltage ΔV (BR)DSS ID = -1mA - -21.9 - mV/℃ temperature coefficient ΔTj referenced to 25℃ Zero gate voltage I drain current DSS VDS = -20V, VGS = 0V - - -1 μA Gate - Source leakage current IGSS VGS = ±10V, VDS = 0V - - ±10 μA Gate threshold voltage VGS(th) VDS = -10V, ID = -100μA -0.3 - -1.0 V Gate threshold voltage ΔV GS(th) ID = -1mA - 2.4 - mV/℃ temperature coefficient ΔTj referenced to 25℃ VGS = -4.5V, ID = -100mA - 2.5 3.8 VGS = -2.5V, ID = -50mA - 3.4 5.1 Static drain - source R *3 V Ω on - state resistance DS(on) GS = -1.8V, ID = -20mA - 4.8 8.2 VGS = -1.5V, ID = -10mA - 6.0 13.2 VGS = -1.2V, ID = -1mA - 10.0 40.0 Forward Transfer |Y Admittance fs|*3 VDS = -10V, ID = -100mA 120 - - mS *1 Pw≦10μs , Duty cycle≦1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/10
20160629 - Rev.001
Datasheet l
Thermal resistance
Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - ambient R *2 thJA - - 833 ℃/W l
Electrical characteristics (Ta = 25°C)
Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V voltage (BR)DSS VGS = 0V, ID = -1mA -20 - - V Breakdown voltage ΔV (BR)DSS ID = -1mA - -21.9 - mV/℃ temperature coefficient ΔTj referenced to 25℃ Zero gate voltage I drain current DSS VDS = -20V, VGS = 0V - - -1 μA Gate - Source leakage current IGSS VGS = ±10V, VDS = 0V - - ±10 μA Gate threshold voltage VGS(th) VDS = -10V, ID = -100μA -0.3 - -1.0 V Gate threshold voltage ΔV GS(th) ID = -1mA - 2.4 - mV/℃ temperature coefficient ΔTj referenced to 25℃ VGS = -4.5V, ID = -100mA - 2.5 3.8 VGS = -2.5V, ID = -50mA - 3.4 5.1 Static drain - source R *3 V Ω on - state resistance DS(on) GS = -1.8V, ID = -20mA - 4.8 8.2 VGS = -1.5V, ID = -10mA - 6.0 13.2 VGS = -1.2V, ID = -1mA - 10.0 40.0 Forward Transfer |Y Admittance fs|*3 VDS = -10V, ID = -100mA 120 - - mS *1 Pw≦10μs , Duty cycle≦1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/10
20160629 - Rev.001