Datasheet BUK9V13-40H (Nexperia) - 9
| Fabricante | Nexperia |
| Descripción | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) |
| Páginas / Página | 13 / 9 — Nexperia. BUK9V13-40H. Dual N-channel 40 V, 13 mOhm logic level MOSFET in … |
| Revisión | 11022021 |
| Formato / tamaño de archivo | PDF / 313 Kb |
| Idioma del documento | Inglés |
Nexperia. BUK9V13-40H. Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
Línea de modelo para esta hoja de datos
Versión de texto del documento
Nexperia BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032349 104 V C DS (p ( F p ) ID 103 Ciss VGS(pl) Coss o VGS(th) 102 VGS C Q rss GS2 QGS1 10 QGS QGD 10-1 1 10 102 Q V G(tot) DS (V) 003aaa508 VGS = 0 V; f = 1 MHz
Fig. 14. Gate charge waveform definitions Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values, FET1 and FET2
aaa-032350 60 IS (A ( ) A 48 36 24 -5 - 5° 5 C ° 12 17 1 5 7 °C ° Tj = 2 5 2 ° 5 C ° 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD (V) VGS = 0 V
Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values, FET1 and FET2
BUK9V13-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 9 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
aaa-032349 104 V C DS (p ( F p ) ID 103 Ciss VGS(pl) Coss o VGS(th) 102 VGS C Q rss GS2 QGS1 10 QGS QGD 10-1 1 10 102 Q V G(tot) DS (V) 003aaa508 VGS = 0 V; f = 1 MHz
Fig. 14. Gate charge waveform definitions Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values, FET1 and FET2
aaa-032350 60 IS (A ( ) A 48 36 24 -5 - 5° 5 C ° 12 17 1 5 7 °C ° Tj = 2 5 2 ° 5 C ° 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD (V) VGS = 0 V
Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values, FET1 and FET2
BUK9V13-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 9 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents