Datasheet BUK9V13-40H (Nexperia) - 4
| Fabricante | Nexperia |
| Descripción | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) |
| Páginas / Página | 13 / 4 — Nexperia. BUK9V13-40H. Dual N-channel 40 V, 13 mOhm logic level MOSFET in … |
| Revisión | 11022021 |
| Formato / tamaño de archivo | PDF / 313 Kb |
| Idioma del documento | Inglés |
Nexperia. BUK9V13-40H. Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
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Nexperia BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032342 103 ID (A ( ) A 102 Li L mit R DSon o n = V DS / I D I tpt p= = 10 1 0 µ s µ 10 10 1 0 0 0 µ s DC 1 1 1 m s m 10 1 0 m s m 10 1 0 0 0 m s m 10-110-1 1 10 102 VDS (V) Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage, FET1 and FET2
aaa-032341 102 IAL A (A ( ) A 10 (1) 1 (2) 2 1 (3) 3 10-1 10-210-3 10-2 10-1 1 10 tAL (ms) (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time, FET1 and FET2 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from Fig. 5 - 3 3.23 K/W junction to mounting base BUK9V13-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 4 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents
Nexperia BUK9V13-40H Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032342 103 ID (A ( ) A 102 Li L mit R DSon o n = V DS / I D I tpt p= = 10 1 0 µ s µ 10 10 1 0 0 0 µ s DC 1 1 1 m s m 10 1 0 m s m 10 1 0 0 0 m s m 10-110-1 1 10 102 VDS (V) Tmb = 25 °C; IDM is a single pulse
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage, FET1 and FET2
aaa-032341 102 IAL A (A ( ) A 10 (1) 1 (2) 2 1 (3) 3 10-1 10-210-3 10-2 10-1 1 10 tAL (ms) (1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time, FET1 and FET2 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from Fig. 5 - 3 3.23 K/W junction to mounting base BUK9V13-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2021. Al rights reserved
Product data sheet 11 February 2021 4 / 13
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Package outline 12. Soldering 13. Legal information Contents