Datasheet NTH4L015N065SC1 (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | MOSFET - SiC Power, Single N-Channel, TO247-4L 650 V, 12 mW, 142 A |
| Páginas / Página | 8 / 4 — NTH4L015N065SC1. TYPICAL CHARACTERISTICS. Figure 1. On−Region … |
| Formato / tamaño de archivo | PDF / 280 Kb |
| Idioma del documento | Inglés |
NTH4L015N065SC1. TYPICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. Figure 2. Normalized On−Resistance vs. Drain
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NTH4L015N065SC1 TYPICAL CHARACTERISTICS
280 4 VGS = 18 V 15 V − 240 −TO 12 V 12 V 3 200 ANCE 160 −RESIST 2 10 V 15 V 120 18 V 80 9 V , DRAIN CURRENT (A) , NORMALIZED DRAIN 1 I D 8 V 40 SOURCE ON DS(on)R 0 0 0 2 4 6 8 10 0 40 80 120 160 200 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage
1.6 120 − ID = 75 A ID = 75 A ) −TO VGS = 18 V 100 1.4 ANCE 80 ANCE (m 1.2 60 −RESIST 40 , ON , NORMALIZED DRAIN 1.0 SOURCE RESIST TJ = 150°C 20 DS(on) DS(on) R R TJ = 25°C 0.8 0 −75 −50 −25 0 25 50 75 100 125 150 175 6 9 12 15 18 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with Figure 4. On−Resistance vs. Gate−to−Source Temperature Voltage
280 280 VDS = 10 V VGS = −5 V 240 100 200 TJ = 175°C 160 TJ = 25°C 120 10 TJ = 175°C TJ = 25°C T 80 J = −55°C , DRAIN CURRENT (A) I D 40 TJ = −55°C , REVERSE DRAIN CURRENT (A) I S 0 1 3 6 9 12 15 2 4 6 8 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4
280 4 VGS = 18 V 15 V − 240 −TO 12 V 12 V 3 200 ANCE 160 −RESIST 2 10 V 15 V 120 18 V 80 9 V , DRAIN CURRENT (A) , NORMALIZED DRAIN 1 I D 8 V 40 SOURCE ON DS(on)R 0 0 0 2 4 6 8 10 0 40 80 120 160 200 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage
1.6 120 − ID = 75 A ID = 75 A ) −TO VGS = 18 V 100 1.4 ANCE 80 ANCE (m 1.2 60 −RESIST 40 , ON , NORMALIZED DRAIN 1.0 SOURCE RESIST TJ = 150°C 20 DS(on) DS(on) R R TJ = 25°C 0.8 0 −75 −50 −25 0 25 50 75 100 125 150 175 6 9 12 15 18 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with Figure 4. On−Resistance vs. Gate−to−Source Temperature Voltage
280 280 VDS = 10 V VGS = −5 V 240 100 200 TJ = 175°C 160 TJ = 25°C 120 10 TJ = 175°C TJ = 25°C T 80 J = −55°C , DRAIN CURRENT (A) I D 40 TJ = −55°C , REVERSE DRAIN CURRENT (A) I S 0 1 3 6 9 12 15 2 4 6 8 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4