Datasheet NTBG015N065SC1 (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | MOSFET – SiC Power, Single N-Channel, D2PAK-7L 650 V, 12 mW, 145 A |
| Páginas / Página | 8 / 4 — NTBG015N065SC1. TYPICAL CHARACTERISTICS. Figure 1. On−Region … |
| Formato / tamaño de archivo | PDF / 243 Kb |
| Idioma del documento | Inglés |
NTBG015N065SC1. TYPICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. Figure 2. Normalized On−Resistance vs. Drain
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NTBG015N065SC1 TYPICAL CHARACTERISTICS
280 4 VGS = 18 V 15 V − VGS = 12 V 240 12 V −TO 200 3 ANCE 160 −RESIST 2 120 15 V 10 V 18 V 80 , DRAIN CURRENT (A) 9 V 1 I D , NORMALIZED DRAIN 40 SOURCE ON 8 V DS(on)R 0 0 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage
1.6 100 − I I D = 75 A ) D = 75 A −TO V W GS = 18 V 80 ANCE 1.4 ANCE (m 60 TJ = 150°C −RESIST 1.2 −RESIST 40 , NORMALIZED DRAIN , ON 1.0 TJ = 25°C 20 SOURCE ON DS(on) DS(on)R R 0.8 0 −75 −50 −25 0 25 50 75 100 125 150 175 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with Figure 4. On−Resistance vs. Gate−to−Source Temperature Voltage
280 280 V TJ = 175°C V DS = 10 V GS = 0 V 240 100 200 TJ = 175°C TJ = −55°C TJ = 25°C 160 TJ = −55°C TJ = 25°C 120 10 80 , DRAIN CURRENT (A) I D 40 , REVERSE DRAIN CURRENT (A) I S 0 1 3 6 9 12 15 2 4 6 8 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4
280 4 VGS = 18 V 15 V − VGS = 12 V 240 12 V −TO 200 3 ANCE 160 −RESIST 2 120 15 V 10 V 18 V 80 , DRAIN CURRENT (A) 9 V 1 I D , NORMALIZED DRAIN 40 SOURCE ON 8 V DS(on)R 0 0 0 1 2 3 4 5 6 7 8 9 10 0 40 80 120 160 200 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage
1.6 100 − I I D = 75 A ) D = 75 A −TO V W GS = 18 V 80 ANCE 1.4 ANCE (m 60 TJ = 150°C −RESIST 1.2 −RESIST 40 , NORMALIZED DRAIN , ON 1.0 TJ = 25°C 20 SOURCE ON DS(on) DS(on)R R 0.8 0 −75 −50 −25 0 25 50 75 100 125 150 175 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with Figure 4. On−Resistance vs. Gate−to−Source Temperature Voltage
280 280 V TJ = 175°C V DS = 10 V GS = 0 V 240 100 200 TJ = 175°C TJ = −55°C TJ = 25°C 160 TJ = −55°C TJ = 25°C 120 10 80 , DRAIN CURRENT (A) I D 40 , REVERSE DRAIN CURRENT (A) I S 0 1 3 6 9 12 15 2 4 6 8 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4