Datasheet NVBG015N065SC1 (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | SiC Power, Single N-Channel, D2PAK-7L 650 V, 12 mW, 145 A |
| Páginas / Página | 8 / 1 — Features. www.onsemi.com. (BR)DSS. RDS(ON) MAX. ID MAX. Typical … |
| Revisión | 2 |
| Formato / tamaño de archivo | PDF / 346 Kb |
| Idioma del documento | Inglés |
Features. www.onsemi.com. (BR)DSS. RDS(ON) MAX. ID MAX. Typical Applications. MAXIMUM RATINGS. Parameter. Symbol. Value. Unit
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W
, 145 A NVBG015N065SC1
Features
• Typ. RDS(on) = 12 mW @ VGS = 18 V Typ. R
www.onsemi.com
DS(on) = 15 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) •
V
100% Avalanche Tested
(BR)DSS RDS(ON) MAX ID MAX
• AEC−Q101 Qualified and PPAP Capable 650 V 18 mW @ 18 V 145 A • RoHS Compliant
Typical Applications
Drain (TAB) • Automotive On Board Charger • Automotive DC/DC Converter for EV/HEV • Automotive Traction Inverter Gate (Pin 1)
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Driver Source (Pin 2) Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage V Power Source (Pins 3, 4, 5, 6, 7) GS −8/+22 V Recommended Operation Val- TC < 175°C VGSop −5/+18 V
N−CHANNEL MOSFET
ues of Gate − Source Voltage Continuous Drain Steady TC = 25°C ID 145 A Current RqJC (Note 2) State Power Dissipation PD 500 W RqJC (Note 2) Continuous Drain Steady TC = 100°C ID 103 A Current RqJA State (Notes 1, 2)
D2PAK−7L
Power Dissipation PD 250 W
CASE 418BJ
RqJA (Notes 1, 2) Pulsed Drain Current (Note 3) TC = 25°C IDM 422 A
MARKING DIAGRAM
Single Pulse Surge TA = 25°C, tp = 10 ms, IDSC 798 A Drain Current Capa- RG = 4.7 W bility BG015N 065SC1 Operating Junction and Storage Temperature TJ, Tstg −55 to °C AYWWZZ Range +175 Source Current (Body Diode) IS 111 A BG015N065SC1 = Specific Device Code Single Pulse Drain−to−Source Avalanche EAS 84 mJ A = Assembly Location Energy (IL = 13 Apk, L = 1 mH) (Note 4) Y = Year Maximum Lead Temperature for Soldering, 1/8″ TL 245 °C WW = Work Week from Case for 10 Seconds ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
ORDERING INFORMATION
assumed, damage may occur and reliability may be affected. 1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper. See detailed ordering and shipping information on page 6 of 2. The entire application environment impacts the thermal resistance values shown, this data sheet. they are not constants and are only valid for the particular conditions noted. 3. Repetitive rating, limited by max junction temperature. 4. EAS of 84 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 13 A, VDD = 50 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
February, 2021 − Rev. 2 NVBG015N065SC1/D
W
, 145 A NVBG015N065SC1
Features
• Typ. RDS(on) = 12 mW @ VGS = 18 V Typ. R
www.onsemi.com
DS(on) = 15 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • Low Effective Output Capacitance (Coss = 424 pF) •
V
100% Avalanche Tested
(BR)DSS RDS(ON) MAX ID MAX
• AEC−Q101 Qualified and PPAP Capable 650 V 18 mW @ 18 V 145 A • RoHS Compliant
Typical Applications
Drain (TAB) • Automotive On Board Charger • Automotive DC/DC Converter for EV/HEV • Automotive Traction Inverter Gate (Pin 1)
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Driver Source (Pin 2) Drain−to−Source Voltage VDSS 650 V Gate−to−Source Voltage V Power Source (Pins 3, 4, 5, 6, 7) GS −8/+22 V Recommended Operation Val- TC < 175°C VGSop −5/+18 V
N−CHANNEL MOSFET
ues of Gate − Source Voltage Continuous Drain Steady TC = 25°C ID 145 A Current RqJC (Note 2) State Power Dissipation PD 500 W RqJC (Note 2) Continuous Drain Steady TC = 100°C ID 103 A Current RqJA State (Notes 1, 2)
D2PAK−7L
Power Dissipation PD 250 W
CASE 418BJ
RqJA (Notes 1, 2) Pulsed Drain Current (Note 3) TC = 25°C IDM 422 A
MARKING DIAGRAM
Single Pulse Surge TA = 25°C, tp = 10 ms, IDSC 798 A Drain Current Capa- RG = 4.7 W bility BG015N 065SC1 Operating Junction and Storage Temperature TJ, Tstg −55 to °C AYWWZZ Range +175 Source Current (Body Diode) IS 111 A BG015N065SC1 = Specific Device Code Single Pulse Drain−to−Source Avalanche EAS 84 mJ A = Assembly Location Energy (IL = 13 Apk, L = 1 mH) (Note 4) Y = Year Maximum Lead Temperature for Soldering, 1/8″ TL 245 °C WW = Work Week from Case for 10 Seconds ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be
ORDERING INFORMATION
assumed, damage may occur and reliability may be affected. 1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper. See detailed ordering and shipping information on page 6 of 2. The entire application environment impacts the thermal resistance values shown, this data sheet. they are not constants and are only valid for the particular conditions noted. 3. Repetitive rating, limited by max junction temperature. 4. EAS of 84 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 13 A, VDD = 50 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
February, 2021 − Rev. 2 NVBG015N065SC1/D