Datasheet MBRS540, NRVBS540T3G (ON Semiconductor) - 3

NRVBS540T3G TYPICAL CHARACTERISTICS
10 10 ARD ARD W W TJ = 125°C TJ = 125°C 1 1 TJ = 100°C ANEOUS FOR ANEOUS FOR CURRENT (A) CURRENT (A) ANT T ANT J = 25°C TJ = −40°C TJ = −40°C i, INST F i, INST F T T J = 100°C J = 25°C T T 0.1 J = −55°C 0.1 J = −55°C 0.10 0.20 0.30 0.40 0.50 0.60 0.10 0.20 0.30 0.40 0.50 0.60 0.70 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
100E−3 100E−3 TJ = 125°C 10E−3 TJ = 125°C 1E−3 T 10E−3 J = 100°C T 100E−6 J = 100°C 1E−3 10E−6 TJ = 25°C 1E−6 TJ = 25°C 100E−6 100E−9 TJ = −55°C TJ = −55°C , REVERSE CURRENT (A) 10E−9 10E−6 I R 1E−9 100E−12 , MAXIMUM REVERSE CURRENT (A) I R 1E−6 0 10 20 30 40 0 10 20 30 40 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
9 4.5 dc freq = 20 kHz 8 4 7 3.5 SQUARE dc ARD ATION (W) WAVE W 6 SQUARE WAVE 3 5 2.5 Ipk/IO = p 4 2 I Ipk/IO = p pk/IO = 5 VERAGE FOR CURRENT (A) 3 1.5 Ipk/IO = 5 , A I O 2 1 Ipk/IO = 10 1 0.5 VERAGE POWER DISSIP Ipk/IO = 20 0 , A 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 T P FO L, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating Figure 6. Forward Power Dissipation www.onsemi.com 3