Datasheet STD30PF03LT4, STD30PF03L-1 (STMicroelectronics) - 4

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Electrical characteristics STD30PF03LT4 - STD30PF03L-1 Table 6. Switching times Symbol Parameter Test conditions Min Typ Max Unit
td(on) Turn-on delay time 64 ns V t DD=25 V, ID=24 A, r Rise time 122 ns R t G=4.7 Ω, VGS=5 V d(off) Turn-off delay time 36 ns Figure 14 t Fall time 26 ns f
Table 7. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit
ISD Source-drain current 24 A I (1) SDM Source-drain current (pulsed) 96 A V (2) SD Forward on voltage ISD = 12 A, VGS=0 1.3 V trr Reverse recovery time I 40 ns SD=24 A, di/dt =100 A/µs, Q V rr Reverse recovery charge DD=50 V, Tj=150 °C 52 µC I Figure 16 RRM Reverse recovery current 2.6 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Note: For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed 4/13 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. On/off states Table 5. Dynamic Table 6. Switching times Table 7. Source drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized breakdown voltage vs temperature 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for diode recovery behavior 4 Package mechanical data 5 Packaging mechanical data 6 Revision history Table 8. Document revision history