Datasheet IRF7389PbF (Infineon) - 7
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 10 / 7 — Fig 16. Fig 17. Fig 18. Fig 19 |
| Formato / tamaño de archivo | PDF / 265 Kb |
| Idioma del documento | Inglés |
Fig 16. Fig 17. Fig 18. Fig 19
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P-Channel IRF7389PbF ) 2.0 0.6 ID = 4.9A ( Ω 0.5 esistance 1.5 n R Resistance 0.4 On ource O 1.0 0.3 (Normalized) V = -4.5V GS rain-to-S 0.2 rain-to-Source 0.5 , D 0.1 (on) S V = -10V GS , D D DS(on) R V = GS 10V R 0.0-60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 A 0 10 20 30 T , Junction Temperature ( C ° ) J -ID , Drain Current (A)
Fig 16.
Normalized On-Resistance
Fig 17.
Typical On-Resistance Vs. Drain Vs. Temperature Current ) 0.16 300 Ω ID ( TOP -1.3A 250 -2.2A BOTTOM -2.8A 0.12 Resistance 200 On 0.08 150 I = -4.9A D 100 rain-to-Source 0.04 , D ) 50 DS(onR E , Single Pulse Avalanche Energy (mJ) AS 0.00 A 0 0 3 6 9 12 15 25 50 75 100 125 150 Starting T , Junction Temperature ( C) ° -V J GS , Gate -to-Source Voltage (V)
Fig 18.
Typical On-Resistance Vs. Gate
Fig 19.
Maximum Avalanche Energy Voltage Vs. Drain Current www.irf.com 7
Fig 16.
Normalized On-Resistance
Fig 17.
Typical On-Resistance Vs. Drain Vs. Temperature Current ) 0.16 300 Ω ID ( TOP -1.3A 250 -2.2A BOTTOM -2.8A 0.12 Resistance 200 On 0.08 150 I = -4.9A D 100 rain-to-Source 0.04 , D ) 50 DS(onR E , Single Pulse Avalanche Energy (mJ) AS 0.00 A 0 0 3 6 9 12 15 25 50 75 100 125 150 Starting T , Junction Temperature ( C) ° -V J GS , Gate -to-Source Voltage (V)
Fig 18.
Typical On-Resistance Vs. Gate
Fig 19.
Maximum Avalanche Energy Voltage Vs. Drain Current www.irf.com 7