Datasheet IRF7389PbF (Infineon) - 4
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 10 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Formato / tamaño de archivo | PDF / 265 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
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IRF7389PbF N-Channel 2.0 ) 0.040 ID = 5.8A (Ω V = 4.5V GS 0.036 1.5 Resistance On 0.032 1.0 0.028 (Normalized) 0.5 , Drain-to-Source 0.024 V = 10V GS (on) (on) S DR , Drain-to-Source On Resistance V = GS 10V R DS 0.0 0.020 A -60 -40 -20 0 20 40 60 80 100 120 140 160 0 10 20 30 40 T , Junction Temperature ( C ° ) J I , Drain Current (A) D
Fig 5.
Normalized On-Resistance
Fig 6.
Typical On-Resistance Vs. Drain Vs. Temperature Current ) 0.12 200 J) ID ID (Ω TOP 1.8A 3.2A 0.10 160 BOTTOM 4.0A nergy (m Resistance 0.08 On 120 anche E val 0.06 I = 5.8A 80 D ulse A 0.04 e P , Drain-to-Source ingl 40 0.02 (on) S , AS R DS E 0.00 A 0 A 0 3 6 9 12 15 25 50 75 100 125 150 J Starting T , Junction Temperature (°C) GS V , Gate-to-Source Voltage (V)
Fig 7.
Typical On-Resistance Vs. Gate
Fig 8.
Maximum Avalanche Energy Voltage Vs. Drain Current 4 www.irf.com
Fig 5.
Normalized On-Resistance
Fig 6.
Typical On-Resistance Vs. Drain Vs. Temperature Current ) 0.12 200 J) ID ID (Ω TOP 1.8A 3.2A 0.10 160 BOTTOM 4.0A nergy (m Resistance 0.08 On 120 anche E val 0.06 I = 5.8A 80 D ulse A 0.04 e P , Drain-to-Source ingl 40 0.02 (on) S , AS R DS E 0.00 A 0 A 0 3 6 9 12 15 25 50 75 100 125 150 J Starting T , Junction Temperature (°C) GS V , Gate-to-Source Voltage (V)
Fig 7.
Typical On-Resistance Vs. Gate
Fig 8.
Maximum Avalanche Energy Voltage Vs. Drain Current 4 www.irf.com