Datasheet IRF7822PBF (International Rectifier) - 4
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET for DC-DC Converters |
| Páginas / Página | 6 / 4 — Fig 5. Fig 6 |
| Formato / tamaño de archivo | PDF / 147 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6
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IRF7822PbF 100.00 100 ) TJ = 175°C Α( tn T = 150 C e J ° rr 10 u C ecru 10.00 o S- T = 25 C o J ° t-n T i J = 25°C 1 arD ,ID I , Reverse Drain Current (A) SD VDS = 15V 20µs PULSE WIDTH V = 0 V GS 1.00 0.1 1.0 2.0 3.0 4.0 5.0 0.2 0.5 0.7 1.0 1.2 V ,Source-to-Drain Voltage (V) SD VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Typical Source-Drain Diode Forward Voltage 100 D = 0.50 JA 10 0.20 ) th (Z 0.10 0.05 e 1 0.02 pons 0.01 P DM al Res t 1 m SINGLE PULSE 0.1 (THERMAL RESPONSE) t her 2 T Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJA A 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (sec) 1 Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com
Fig 5.
Typical Transfer Characteristics
Fig 6.
Typical Source-Drain Diode Forward Voltage 100 D = 0.50 JA 10 0.20 ) th (Z 0.10 0.05 e 1 0.02 pons 0.01 P DM al Res t 1 m SINGLE PULSE 0.1 (THERMAL RESPONSE) t her 2 T Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJA A 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (sec) 1 Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4 www.irf.com