Datasheet IRF7822 (International Rectifier) - 3
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET for DC-DC Converters |
| Páginas / Página | 6 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| Formato / tamaño de archivo | PDF / 73 Kb |
| Idioma del documento | Inglés |
Fig 1. Fig 2. Fig 3. Fig 4
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IRF7822 2.0 6 I = D 15A ID = 15A V = 24V DS 5 1.5 4 1.0 (Normalized) 2 0.5 1 GSV , Gate-to-Source Voltage (V) DS(on) V = 4.5V R , Drain-to-Source On Resistance GS 0.0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 T , Junction Temperature ( C) ° J Q , Total Gate Charge (nC) G
Fig 1.
Normalized On-Resistance
Fig 2.
Typical Gate Charge Vs. Vs. Temperature Gate-to-Source Voltage ) 0.010 Ω 100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED 0.009 Crss = Cgd Coss = Cds + Cgd 0.008 10000 Ciss 0.007 ID = 15A 0.006 Coss 1000 C, Capacitance(pF) 0.005 , Drain-to -Source On Resistance ( Crss 0.004 DS(on) 100 R 0.003 1 10 100 3.0 4.0 5.0 6.0 7.0 V V DS, Drain-to-Source Voltage (V) GS, Gate -to -Source Voltage (V)
Fig 3.
On-Resistance Vs. Gate Voltage
Fig 4.
Typical Capacitance Vs. Drain-to-Source Voltage www.irf.com 3
Fig 1.
Normalized On-Resistance
Fig 2.
Typical Gate Charge Vs. Vs. Temperature Gate-to-Source Voltage ) 0.010 Ω 100000 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED 0.009 Crss = Cgd Coss = Cds + Cgd 0.008 10000 Ciss 0.007 ID = 15A 0.006 Coss 1000 C, Capacitance(pF) 0.005 , Drain-to -Source On Resistance ( Crss 0.004 DS(on) 100 R 0.003 1 10 100 3.0 4.0 5.0 6.0 7.0 V V DS, Drain-to-Source Voltage (V) GS, Gate -to -Source Voltage (V)
Fig 3.
On-Resistance Vs. Gate Voltage
Fig 4.
Typical Capacitance Vs. Drain-to-Source Voltage www.irf.com 3