Datasheet IRF7425PbF (Infineon) - 5
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 5 — Fig 10a. Fig 9. Fig 10b. Fig 11 |
| Formato / tamaño de archivo | PDF / 197 Kb |
| Idioma del documento | Inglés |
Fig 10a. Fig 9. Fig 10b. Fig 11
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IRF7425PbF 15 RD VDS V 12 GS D.U.T. RG -+ VDD 9 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 D-I , Drain Current (A)
Fig 10a.
Switching Time Test Circuit 3 td(on) tr td(off) tf VGS 0 10% 25 50 75 100 125 150 T , Case Temperature ( C) ° C 90%
Fig 9.
Maximum Drain Current Vs. VDS Case Temperature
Fig 10b.
Switching Time Waveforms 100 D = 0.50 JA 10 0.20 ) th (Z 0.10 0.05 1 0.02 0.01 PDM al Response m t1 0.1 SINGLE PULSE (THERMAL RESPONSE) t2 Ther Notes: 1. Duty factor D = t / t 1 2 2. Peak T J= P DM x Z thJA + TA 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
Fig 10a.
Switching Time Test Circuit 3 td(on) tr td(off) tf VGS 0 10% 25 50 75 100 125 150 T , Case Temperature ( C) ° C 90%
Fig 9.
Maximum Drain Current Vs. VDS Case Temperature
Fig 10b.
Switching Time Waveforms 100 D = 0.50 JA 10 0.20 ) th (Z 0.10 0.05 1 0.02 0.01 PDM al Response m t1 0.1 SINGLE PULSE (THERMAL RESPONSE) t2 Ther Notes: 1. Duty factor D = t / t 1 2 2. Peak T J= P DM x Z thJA + TA 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013