Datasheet IRF7425PbF (Infineon) - 3
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| Formato / tamaño de archivo | PDF / 197 Kb |
| Idioma del documento | Inglés |
Fig 1. Fig 2. Fig 3. Fig 4
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IRF7425PbF 1000 1000 VGS VGS TOP -7.0V TOP -7.0V -5.0V -5.0V -4.5V -4.5V -2.5V -2.5V 100 -1.8V -1.8V -1.5V -1.5V -1.2V 100 -1.2V BOTTOM -1.0V BOTTOM -1.0V 10 10 1 -1.0V 1 D 0.1 -1.0V D -I , Drain-to-Source Current (A) -I , Drain-to-Source Current (A) 20μs PULSE WIDTH 20μs PULSE WIDTH T = J 25 °C T = 150 J °C 0.01 0.1 0.1 1 10 100 0.1 1 10 100 -V , Drain-to-Source Voltage (V) DS -V , Drain-to-Source Voltage (V) DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 100 2.0 ID = -15A T = 150 C J ° esistance 1.5 10 n R 1.0 ource O T = 25 C J ° (Normalized) 1 rain-to-S 0.5 D-I , Drain-to-Source Current (A) (on) V = - DS 15V S 20μs PULSE WIDTH , D D V = GS -4.5V 0.1 R 0.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -60 -40 -20 0 20 40 60 80 100 120 140 160 -V , Gate-to-Source Voltage (V) GS T , Junction Temperature ( C ° ) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature 3 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 100 2.0 ID = -15A T = 150 C J ° esistance 1.5 10 n R 1.0 ource O T = 25 C J ° (Normalized) 1 rain-to-S 0.5 D-I , Drain-to-Source Current (A) (on) V = - DS 15V S 20μs PULSE WIDTH , D D V = GS -4.5V 0.1 R 0.0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -60 -40 -20 0 20 40 60 80 100 120 140 160 -V , Gate-to-Source Voltage (V) GS T , Junction Temperature ( C ° ) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature 3 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 2013