Datasheet 2ED24427N01F (Infineon) - 8

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2ED24427N01F 10 A dual-channel low-side gate driver IC 5 Application information and additional details
Information regarding the following topics is included as subsections within this section of the datasheet. • Gate driver • Bridge tied gate transformer driver (BT-GTD) • Driving circuitry design: thermal considerations • Bias and transient conditions • System functionality with improved thermal behavior • Square input pulse distortion • Bypass capacitor • Additional information
5.1 Gate driver
The 2ED24427N01F is a high current gate driver for single ended applications. Due to its very high output current and low thermal resistance vs. pcb, it is capable to drive Mosfets with very large input capacitance at frequencies up to fsw = 200 kHz or higher without the need of negative supply. The following Figure 4 shows the typical application schematic:
Figure 4 Typical gate driver application
Rg values have to be selected based on the requested tr and tf of the application and may vary between 2.5 Ω and 20 Ω, while the input capacitance of the fets can go up to 20 nF or more depending on the switching frequency. Since the very high peak output current, the bypass capacitor Cpb has to be mounted in the close proximityof the Vcc and COM pins and a ceramic type with low ESR has to be chosen.
5.2 Bridge tied gate transformer driver (BT-GTD)
This is a popular configuration that allows driving high side fets using a low side gate driver, the Figure 5 shows the typical schematic for a single fet drive:
Figure 5 Bridge tied gate driver configuration
In this configuration the gate transformer parameters have a very important role, most manufacturers indicate the following in their datasheets: Datasheet 8 of 21 V 2.0 www.infineon.com/gdLowSide 2019-11-10