Datasheet CMPT2222A (Central Semiconductor)
| Fabricante | Central Semiconductor |
| Descripción | Surface Mount NPN Silicon Transistor |
| Páginas / Página | 3 / 1 — CMPT2222A. w w w. c e n t r a l s e m i . c o m. SURFACE MOUNT. NPN … |
| Formato / tamaño de archivo | PDF / 404 Kb |
| Idioma del documento | Inglés |
CMPT2222A. w w w. c e n t r a l s e m i . c o m. SURFACE MOUNT. NPN SILICON TRANSISTOR. DESCRIPTION:. MARKING CODE: C1P
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CMPT2222A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general purpose and switching applications.
MARKING CODE: C1P SOT-23 CASE MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 600 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO VCB=60V 10 nA ICBO VCB=60V, TA=125°C 10 μA ICEV VCE=60V, VEB=3.0V 10 nA IEBO VEB=3.0V 10 nA BVCBO IC=10μA 75 V BVCEO IC=10mA 40 V BVEBO IE=10μA 6.0 V VCE(SAT) IC=150mA, IB=15mA 0.3 V VCE(SAT) IC=500mA, IB=50mA 1.0 V VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 V VBE(SAT) IC=500mA, IB=50mA 2.0 V hFE VCE=10V, IC=0.1mA 35 hFE VCE=10V, IC=1.0mA 50 hFE VCE=10V, IC=10mA 75 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=500mA 40 fT VCE=20V, IC=20mA, f=100MHz 300 MHz Cob VCB=10V, IE=0, f=1.0MHz 8.0 pF Cib VBE=0.5V, IC=0, f=1.0MHz 25 pF R5 (1-February 2010)
The CENTRAL SEMICONDUCTOR CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal, general purpose and switching applications.
MARKING CODE: C1P SOT-23 CASE MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 600 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO VCB=60V 10 nA ICBO VCB=60V, TA=125°C 10 μA ICEV VCE=60V, VEB=3.0V 10 nA IEBO VEB=3.0V 10 nA BVCBO IC=10μA 75 V BVCEO IC=10mA 40 V BVEBO IE=10μA 6.0 V VCE(SAT) IC=150mA, IB=15mA 0.3 V VCE(SAT) IC=500mA, IB=50mA 1.0 V VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 V VBE(SAT) IC=500mA, IB=50mA 2.0 V hFE VCE=10V, IC=0.1mA 35 hFE VCE=10V, IC=1.0mA 50 hFE VCE=10V, IC=10mA 75 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=500mA 40 fT VCE=20V, IC=20mA, f=100MHz 300 MHz Cob VCB=10V, IE=0, f=1.0MHz 8.0 pF Cib VBE=0.5V, IC=0, f=1.0MHz 25 pF R5 (1-February 2010)