Datasheet BYV26A, BYV26B, BYV26C, BYV26D, BYV26E (Vishay) - 3
| Fabricante | Vishay |
| Descripción | Ultra-Fast Avalanche Sinterglass Diode |
| Páginas / Página | 4 / 3 — BYV26A, BYV26B, BYV26C, BYV26D, BYV26E. PACKAGE DIMENSIONS. SOD-57 |
| Formato / tamaño de archivo | PDF / 131 Kb |
| Idioma del documento | Inglés |
BYV26A, BYV26B, BYV26C, BYV26D, BYV26E. PACKAGE DIMENSIONS. SOD-57
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BYV26A, BYV26B, BYV26C, BYV26D, BYV26E
www.vishay.com Vishay Semiconductors 1.2 40 f = 1 MHz 35 1.0 R = 45 K/W 30 thJA 0.8 BYV26C 25 0.6 20 15 0.4 R = 100 K/W thJA 10 - DiodeCapacitance (pF) D 0.2 - Average Forward Current (A) C 5 I FAV 0 0 0 40 80 120 160 200 0.1 1 10 100 959730 T 16380 amb - Ambient Temperature (°C) VR - Reverse Voltage (V) Fig. 3 - Max. Average Forward Current vs. Ambient Temperature Fig. 5 - Diode Capacitance vs. Reverse Voltage 10 40 f = 1 MHz T = 175 °C j 35 1 30 BYV26E 25 T = 25 °C j 0.1 20 15 0.01 - Forward Current (A) 10 I F - Diode Capacitance (pF) D C 5 0.001 0 0 1 2 3 4 5 6 7 0.1 1 10 100 959731 VF - Forward Voltage (V) 16381 VR - Reverse Voltage (V) Fig. 4 - Max. Reverse Current vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max. 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Rev. 1.8, 21-Feb-18
3
Document Number: 86040 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors 1.2 40 f = 1 MHz 35 1.0 R = 45 K/W 30 thJA 0.8 BYV26C 25 0.6 20 15 0.4 R = 100 K/W thJA 10 - DiodeCapacitance (pF) D 0.2 - Average Forward Current (A) C 5 I FAV 0 0 0 40 80 120 160 200 0.1 1 10 100 959730 T 16380 amb - Ambient Temperature (°C) VR - Reverse Voltage (V) Fig. 3 - Max. Average Forward Current vs. Ambient Temperature Fig. 5 - Diode Capacitance vs. Reverse Voltage 10 40 f = 1 MHz T = 175 °C j 35 1 30 BYV26E 25 T = 25 °C j 0.1 20 15 0.01 - Forward Current (A) 10 I F - Diode Capacitance (pF) D C 5 0.001 0 0 1 2 3 4 5 6 7 0.1 1 10 100 959731 VF - Forward Voltage (V) 16381 VR - Reverse Voltage (V) Fig. 4 - Max. Reverse Current vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max. 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Rev. 1.8, 21-Feb-18
3
Document Number: 86040 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000