Datasheet IRFP9240, SiHFP9240 (Vishay) - 6
| Fabricante | Vishay |
| Descripción | Power MOSFET |
| Páginas / Página | 11 / 6 — IRFP9240, SiHFP9240. Fig. 12a - Unclamped Inductive Test Circuit. Fig. … |
| Formato / tamaño de archivo | PDF / 1.9 Mb |
| Idioma del documento | Inglés |
IRFP9240, SiHFP9240. Fig. 12a - Unclamped Inductive Test Circuit. Fig. 12b - Unclamped Inductive Waveforms
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IRFP9240, SiHFP9240
Vishay Siliconix L I V AS DS Vary tp to obtain required IAS VDS R D.U.T. G -+ VDD I V AS DD - 10 V tp t 0.01 p Ω VDS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G - 10 V 12 V 0.2 µF 0.3 µF Q Q - GS GD + V D.U.T. DS VG VGS - 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91239 6 S11-0444-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Vishay Siliconix L I V AS DS Vary tp to obtain required IAS VDS R D.U.T. G -+ VDD I V AS DD - 10 V tp t 0.01 p Ω VDS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G - 10 V 12 V 0.2 µF 0.3 µF Q Q - GS GD + V D.U.T. DS VG VGS - 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91239 6 S11-0444-Rev. B, 14-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000