Datasheet SQJ211ELP (Vishay) - 4

SQJ211ELP
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.15 10000 ) 0.12 Ω ) 10 (A T = 150 °C J 1000 1000 0.09 rrent u ne ne ine ne ine 1 1st li n-Resistance ( 1st li 2nd l 2nd l 2nd li 0.06 O T = 150 °C ource C - J S 100 100 - (on) I S 0.1 S DR 0.03 T = 25 °C J T = 25 °C J 0.01 10 0 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V - Source-to-Drain Voltage (V) V - Gate-to-Source Voltage (V) SD GS
Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Axis Title Axis Title 1.1 10000 -110 10000 ) 0.8 I = 250 μA (V -113 D I = -1 mA ) D ltage 1000 o 1000 0.5 -116 nce (V a ne ine ne ine ari ource V V I = 5 mA D 1st li 2nd l - 1st li 2nd l ) 0.2 -119 (th 100 100 GSV rain-to-S D -0.1 - -122 DSV -0.4 10 -125 10 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 T - Junction Temperature (°C) T - Junction Temperature (°C) J J
Threshold Voltage Drain Source Breakdown vs. Junction Temperature
Axis Title Axis Title 2.3 10000 1000 10000 d) e I = 8 A V = 10 V D GS liz 1.9 100 a ) 1000 I limited 100 μs 1000 DM 1.5 10 ne rrent (A ine ne ine u 1 ms V = 4.5 V GS C 1st li n 10 ms 1st li 2nd l 1.1 2nd l 1 rai 100 D 100 ms, 1 s, 10 s, DC a 100 n-Resistance (Norm - Limited by RDS(on) O I D - 0.7 0.1 BVDSS limited (on) S T = 25 °C, D C R single pulse 0.3 10 0.01 10 -50 -25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 1000 T - Junction Temperature (°C) V - Drain-to-Source Voltage (V) J DS
On-Resistance vs. Junction Temperature Safe Operating Area Note
a. VGS > minimum VGS at which RDS(on) is specified S20-0536-Rev. A, 13-Jul-2020
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