Datasheet T3035H-8T (STMicroelectronics) - 4

T3035H-8T Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state Figure 2. On-state RMS current versus case temperature RMS current
IT(RMS)(A) P(W) 40 32 α = 180° α = 180° 36 28 32 24 28 20 24 16 20 16 12 12 8 8 180° 4 4 Tc(°C) IT(RMS)(A) 0 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Figure 3. On-state RMS current versus ambient Figure 4. On-state characteristics (maximum values) temperature (free air convection)
ITM(A) IT(RMS)(A) 1000 3.5 Tj max. α = 180° Vto = 0.83 V 3.0 Rd = 16 mΩ 2.5 100 2.0 Tj = 150 °C 1.5 10 1.0 Tj = 25 °C 0.5 T VTM(V) 0.0 a(°C) 1 0 25 50 75 100 125 150 0 1 2 3 4 5
Figure 6. Recommended maximum case-to-ambient Figure 5. Relative variation of thermal impedance versus thermal resistance versus ambient temperature for pulse duration different peak off-state voltages
K = [Zth/Rth] 1.0E+00 Rth(c-a) (°C/W) (for heatsink sizing to avoid thermal runaway) 70 Zth(j-c) Zth(j-a) Junction-to-ambiant thermal resistance : Typical 60°C/W (without heatsink) 60 VDRM=VRRM VDRM=VRRM 50 =400 V =200 V 1.0E-01 40 VDRM=VRRM = 600 V 30 20 VDRM=VRRM = 800 V 10 tp(s) With 15°C/W heatsink 1.0E-02 Ta (°C) 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 0 20 40 60 80 100 120 140
DS12707
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Rev 5 page 4/11
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB package information 3 Ordering information Revision history