Datasheet T3035H-8G (STMicroelectronics) - 4

T3035H-8G Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state Figure 2. On-state RMS current versus case temperature RMS current
IT(RMS)(A) P(W) 40 32 α = 180° α = 180° 36 28 32 24 28 20 24 16 20 16 12 12 8 8 180° 4 4 Tc(°C) IT(RMS)(A) 0 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Figure 3. On-state RMS current versus ambient Figure 4. On-state characteristics (maximum values) temperature (free air convection)
ITM(A) IT(RMS)(A) 1000 4.5 Tj max. Vto = 0.83 V 4.0 α = 180° Rd = 16 mΩ 3.5 100 3.0 2.5 Tj = 150 °C 2.0 1.5 10 Tj = 25 °C 1.0 0.5 Ta(°C) V 0.0 TM(V) 1 0 25 50 75 100 125 150 0 1 2 3 4 5
Figure 6. Recommended maximum case-to-ambient Figure 5. Relative variation of thermal impedance versus thermal resistance versus ambient temperature for pulse duration different peak off-state voltages
K = [Zth/Rth] Rth(c-a) (°C/W) (for heatsink sizing to avoid thermal runaway) 1.0E+00 70 Zth(j-c) 60 V VDRM=VRRM DRM=VRRM =400 V =200 V Z 50 th(j-a) 40 VDRM=VRRM 1.0E-01 = 600 V 30 20 VDRM=VRRM = 800 V 10 tp(s) Ta (°C) 1.0E-02 0 1.0E-03 1.0E-02 1.0E-01 1.0E+001.0E+011.0E+02 1.0E+031.0E+041.0E+05 20 40 60 80 100 120 140
DS12705
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Rev 5 page 4/12
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history