Datasheet T835H-8I (STMicroelectronics) - 5

360° 360° T835H-8I Characteristics (curves) Figure 8. Relative variation of holding current and Figure 7. Relative variation of gate trigger voltage and latching current versus junction temperature (typical current versus junction temperature (typical values) values)
IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C] 2 IH,IL [Tj] / IH,IL [Tj = 25 °C] 1.6 IGT Q3 1.5 IGT Q1-Q2 1.2 1 VGT 0.8 IL 0.5 0.4 IH Tj (°C) 0 Tj (°C) 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Figure 9. Surge peak on-state current versus number of Figure 10. Non repetitive surge peak on-state current for a cycles sinusoidal pulse with width tp < 10 ms
ITSM(A) ITSM(A) 90 1000 80 Tj initial = 25 °C t =20ms 70 Non repetitive dl/dt limitation: 100 A/µs One cycle 60 Tj initial = 25 °C I 50 TSM 100 40 30 Repetitive T 20 c = 130°C 10 Number of cycles t (ms) 0 10 p 1 10 100 1000 0.01 0.10 1.00 10.00
Figure 11. Relative variation of static dV/dt immunity Figure 12. Relative variation of critical rate of decrease of versus junction temperature main current versus junction temperature
dV/dt [Tj] / dV/dt [Tj = 150 °C] (dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C] 4 14 V 12 D = VR = 536 V 3 10 8 2 6 4 1 2 Tj(°C) T 0 j(°C) 0 25 50 75 100 125 150 25 50 75 100 125 150
DS13573
-
Rev 2 page 5/11
α α Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB insulated package information 3 Ordering information Revision history