AOB66518LTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10000 V =75V DS I =20A D 8 8000 C ) iss )pFs 6 (t 6000 Volnce( C at oss iGS 4 4000 Vpac a C 2 2000 Crss 0 0 0 20 40 60 80 100 0 30 60 90 120 150 Q (nC)V (Volts)gDSFigure 7: Gate-Charge CharacteristicsFigure 8: Capacitance Characteristics 1000.0 1000 T =175°C J(Max) 10ms T =25°C C R 10ms 100.0 DS(ON) 800 limited 100ms ) 600 s) 10.0 W(p 1ms rmeA(ow 400 I D 1.0 10ms P 100ms T =175°C J(Max) 200 0.1 T =25°C C 0 0.0 0.0001 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 V (Volts)DSPulse Width (s)V> or equal to 8VFigure 10: Single Pulse Power Rating Junction-to-GSFigure 9: Maximum Forward BiasedCase (NoteSafe Operating Area (Note F) 10 D=T /T on In descending order nt T =T +P .Z .R D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse e J,PK C DM qJC qJC iensc Rq =0.4°C/W JC anrat 1 TsidseezR lmalir mar 0.1 P e Single Pulse DM No hTJC q Z Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: June 2020 www.aosmd.com Page 4 of 6