Datasheet AUIRL7732S2TR (Infineon) - 6

FabricanteInfineon
DescripciónAutomotive Grade. Automotive DirectFET Power MOSFET
Páginas / Página11 / 6 — Fig 13. Fig 14. Fig 15. Fig 16
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Fig 13. Fig 14. Fig 15. Fig 16

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  AUIRL7732S2TR 1000 200 ) OPERATION IN THIS AREA J ID LIMITED BY R m 180 DS(on) ( TOP 6.8A ) y A g ( r 160 18A t e n n BOTTOM 35A e E r 140 r 100µsec 100 e u 1msec h C c n 120 e a c l r a u v 100 o A S 10msec - e o s t l 80 - u ni 10 P ar DC el 60 D g n , i S 40 I D Tc = 25°C , Tj = 175°C S A 20 Single Pulse E 1 0 0 1 10 100 25 50 75 100 125 150 175 VDS, Drain-to-Source Voltage (V) Starting TJ , Junction Temperature (°C)
Fig 13.
Maximum Safe Operating Area
Fig 14.
Maximum Avalanche Energy vs. Temperature 10 W/ D = 0.50 C° ) 1 0.20 CJht 0.10 Z ( 0.05 R R R R 1 2 3 4 Ri (°C/W) i (sec) e R R R R 1 2 3 4 s 0.1 0.02  1.60955 0.006147 n J  C o J C p 0.01  1.36375 0.029323 s 1     2 3 4 e 1    2 3 4 R 0.12482 2.09e-05 la Ci= iRi Ci= iRi m 0.01 0.60108 0.000679 reh SINGLE PULSE Notes: T ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec)
Fig 15.
Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and 100 ) A Tstart =25°C (Single Pulse) ( tnerruC 0.01 10 ehcn 0.05 ala 0.10 v A 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec)
Fig 16.
Typical Avalanche Current vs. Pulse Width 6 2015-12-11