Datasheet AUIRL7732S2TR (Infineon) - 3

  AUIRL7732S2TR
Diode Characteristics
       
Symbol Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol I D S ––– ––– 58 (Body Diode) showing the A Pulsed Source Current integral reverse G ISM ––– ––– 230 (Body Diode)  p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 35A, VGS = 0V  trr   Reverse Recovery Time ––– 23 35 ns TJ = 25°C, IF = 35A, VDD = 20V Qrr Reverse Recovery Charge ––– 16 24 nC dv/dt = 100A/µs   Surface mounted on 1 in.  Mounted to a PCB with  Mounted on minimum square Cu board (still air). small clip heatsink (still air) footprint full size board with metalized back and with small clip heatsink (still air).  Click on this section to link to the appropriate technical paper.  Click on this section to link to the DirectFET® Website.  Surface mounted on 1 in. square Cu board, steady state.  TC measured with thermocouple mounted to top (Drain) of part.  Repetitive rating; pulse width limited by max. junction temperature.  Starting TJ = 25°C, L = 0.075mH, RG = 50, IAS = 35A.  Pulse width  400µs; duty cycle  2%.  Used double sided cooling, mounting pad with large heat sink.  Mounted on minimum footprint full size board with metalized back and with small clip heat sink.  R is measured at TJ of approximately 90°C. 3 2015-12-11