Datasheet IRF6775MTRPbF (Infineon) - 3
| Fabricante | Infineon |
| Descripción | Digital Audio MOSFET |
| Páginas / Página | 10 / 3 — IRF6775MTRPbF. Fig 1. Fig 2. Fig 3. Fig 4. Fig 5. Fig 6 |
| Formato / tamaño de archivo | PDF / 243 Kb |
| Idioma del documento | Inglés |
IRF6775MTRPbF. Fig 1. Fig 2. Fig 3. Fig 4. Fig 5. Fig 6
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IRF6775MTRPbF
100 100 VGS VGS TOP 15V TOP 15V ) A 10V 10V ( A ( 9.0V t 9.0V t n 8.0V n 8.0V er 7.0V e 7.0V r rr u 6.5V u 6.5V C 6.0V 6.0V C e BOTTOM 5.5V e BOTTOM 5.5V cr cr u 10 u o 10 o S- S- ot o - t- ni ni 5.5V ar ar D D , 5.5V , I D I D ≤ 60μs PULSE WIDTH ≤ 60μs PULSE WIDTH Tj = 25°C Tj = 150°C 1 1 0.1 1 10 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 100 2.5 V e I DS = 25V cn D = 5.6A ) ≤ 60μs PULSE WIDTH at VGS = 10V Α s ( i t s n 10 e e 2.0 r R r u n C O ) e e c c d r r e u u z 1 i o o la 1.5 S S - - m o o r t t - - o n n i i N( a a r TJ = 150°C r D 0.1 D , T , J = 25°C 1.0 ) I D n T J = -40°C o( S D R 0.01 0.5 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature 100000 20 VGS = 0V, f = 1 MHZ C I iss = Cgs + Cgd, Cds SHORTED ) D= 5.6A V C ( V rss = Cgd DS= 120V e 16 10000 C g VDS= 75V ) oss = Cds + Cgd atl VDS= 30V F o p( V e e 12 c c n r a Ciss u ti 1000 o c S a - p ot a - 8 e C t , Coss a C G , 100 S 4 G Crss V 0 10 0 10 20 30 40 1 10 100 1000 Q V G Total Gate Charge (nC) DS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 26, 2014
100 100 VGS VGS TOP 15V TOP 15V ) A 10V 10V ( A ( 9.0V t 9.0V t n 8.0V n 8.0V er 7.0V e 7.0V r rr u 6.5V u 6.5V C 6.0V 6.0V C e BOTTOM 5.5V e BOTTOM 5.5V cr cr u 10 u o 10 o S- S- ot o - t- ni ni 5.5V ar ar D D , 5.5V , I D I D ≤ 60μs PULSE WIDTH ≤ 60μs PULSE WIDTH Tj = 25°C Tj = 150°C 1 1 0.1 1 10 100 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 100 2.5 V e I DS = 25V cn D = 5.6A ) ≤ 60μs PULSE WIDTH at VGS = 10V Α s ( i t s n 10 e e 2.0 r R r u n C O ) e e c c d r r e u u z 1 i o o la 1.5 S S - - m o o r t t - - o n n i i N( a a r TJ = 150°C r D 0.1 D , T , J = 25°C 1.0 ) I D n T J = -40°C o( S D R 0.01 0.5 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature 100000 20 VGS = 0V, f = 1 MHZ C I iss = Cgs + Cgd, Cds SHORTED ) D= 5.6A V C ( V rss = Cgd DS= 120V e 16 10000 C g VDS= 75V ) oss = Cds + Cgd atl VDS= 30V F o p( V e e 12 c c n r a Ciss u ti 1000 o c S a - p ot a - 8 e C t , Coss a C G , 100 S 4 G Crss V 0 10 0 10 20 30 40 1 10 100 1000 Q V G Total Gate Charge (nC) DS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage 3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 26, 2014