Datasheet IRF6775MTRPbF (Infineon) - 2
| Fabricante | Infineon |
| Descripción | Digital Audio MOSFET |
| Páginas / Página | 10 / 2 — IRF6775MTRPbF. Static @ TJ = 25°C (unless otherwise specified). … |
| Formato / tamaño de archivo | PDF / 243 Kb |
| Idioma del documento | Inglés |
IRF6775MTRPbF. Static @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
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IRF6775MTRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250μA ΔV Reference to 25°C, I (BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C D = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 47 56 mΩ VGS = 10V, ID = 5.6A f VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 100μA IDSS Drain-to-Source Leakage Current ––– ––– 20 μA VDS = 150V, VGS = 0V ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG(int) Internal Gate Resistance ––– ––– 3.0 Ω
Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 11 ––– ––– S VDS = 50V, ID = 5.6A Qg Total Gate Charge ––– 25 36 VDS = 75V Qgs1 Pre-Vth Gate-to-Source Charge ––– 5.8 ––– VGS = 10V Qgs2 Post-Vth Gate-to-Source Charge ––– 1.4 ––– ID = 5.6A Qgd Gate-to-Drain Charge ––– 6.6 ––– nC See Fig. 6 and 17 Qgodr Gate Charge Overdrive ––– 11 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 8.0 ––– td(on) Turn-On Delay Time ––– 5.9 ––– VDD = 75V tr Rise Time ––– 7.8 ––– ID = 5.6A td(off) Turn-Off Delay Time ––– 5.8 ––– ns RG = 6.0Ω tf Fal Time ––– 15 ––– VGS = 10V f Ciss Input Capacitance ––– 1411 ––– VGS = 0V Coss Output Capacitance ––– 193 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 40 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1557 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 93 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 175 ––– VGS = 0V, VDS = 0V to 120V g
Diode Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current ––– ––– 28 MOSFET symbol (Body Diode) A showing the G ISM Pulsed Source Current ––– ––– 39 integral reverse S (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.6A, VGS = 0V f trr Reverse Recovery Time ––– 62 ––– ns TJ = 25°C, IF = 5.6A, VDD = 25V Qrr Reverse Recovery Charge ––– 164 ––– nC di/dt = 100A/μs f
Notes:
Repetitive rating; pulse width limited by Used double sided cooling , mounting pad with large heatsink. max. junction temperature. Mounted on minimum footprint full size board with Starting T metalized back and with small clip heatsink. J = 25°C, L = 0.53mH, RG = 25Ω, IAS = 11.2A. Surface mounted on 1 in. square Cu board. TC measured with thermal couple mounted to top Pulse width ≤ 400μs; duty cycle ≤ 2%. (Drain) of part. C Rθ is measured at TJ of approximately 90°C. oss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 26, 2014
V(BR)DSS Drain-to-Source Breakdown Voltage 150 ––– ––– V VGS = 0V, ID = 250μA ΔV Reference to 25°C, I (BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.17 ––– V/°C D = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 47 56 mΩ VGS = 10V, ID = 5.6A f VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 100μA IDSS Drain-to-Source Leakage Current ––– ––– 20 μA VDS = 150V, VGS = 0V ––– ––– 250 VDS = 120V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG(int) Internal Gate Resistance ––– ––– 3.0 Ω
Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 11 ––– ––– S VDS = 50V, ID = 5.6A Qg Total Gate Charge ––– 25 36 VDS = 75V Qgs1 Pre-Vth Gate-to-Source Charge ––– 5.8 ––– VGS = 10V Qgs2 Post-Vth Gate-to-Source Charge ––– 1.4 ––– ID = 5.6A Qgd Gate-to-Drain Charge ––– 6.6 ––– nC See Fig. 6 and 17 Qgodr Gate Charge Overdrive ––– 11 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 8.0 ––– td(on) Turn-On Delay Time ––– 5.9 ––– VDD = 75V tr Rise Time ––– 7.8 ––– ID = 5.6A td(off) Turn-Off Delay Time ––– 5.8 ––– ns RG = 6.0Ω tf Fal Time ––– 15 ––– VGS = 10V f Ciss Input Capacitance ––– 1411 ––– VGS = 0V Coss Output Capacitance ––– 193 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 40 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1557 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 93 ––– VGS = 0V, VDS = 120V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 175 ––– VGS = 0V, VDS = 0V to 120V g
Diode Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current ––– ––– 28 MOSFET symbol (Body Diode) A showing the G ISM Pulsed Source Current ––– ––– 39 integral reverse S (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.6A, VGS = 0V f trr Reverse Recovery Time ––– 62 ––– ns TJ = 25°C, IF = 5.6A, VDD = 25V Qrr Reverse Recovery Charge ––– 164 ––– nC di/dt = 100A/μs f
Notes:
Repetitive rating; pulse width limited by Used double sided cooling , mounting pad with large heatsink. max. junction temperature. Mounted on minimum footprint full size board with Starting T metalized back and with small clip heatsink. J = 25°C, L = 0.53mH, RG = 25Ω, IAS = 11.2A. Surface mounted on 1 in. square Cu board. TC measured with thermal couple mounted to top Pulse width ≤ 400μs; duty cycle ≤ 2%. (Drain) of part. C Rθ is measured at TJ of approximately 90°C. oss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 26, 2014