Datasheet IRF6665PbF, IRF6665TRPbF (Infineon) - 2

IRF6665PbF
Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V Reference to 25°C, I (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C D = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 53 62 mΩ VGS = 10V, ID = 5.0A f VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG(int) Internal Gate Resistance ––– 1.9 2.9 Ω
Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 6.6 ––– ––– S VDS = 10V, ID = 5.0A Qg Total Gate Charge ––– 8.4 13 VDS = 50V Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.2 ––– VGS = 10V Qgs2 Post-Vth Gate-to-Source Charge ––– 0.64 ––– ID = 5.0A Qgd Gate-to-Drain Charge ––– 2.8 ––– nC See Fig. 6 and 17 Qgodr Gate Charge Overdrive ––– 2.8 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 3.4 ––– td(on) Turn-On Delay Time ––– 7.4 ––– VDD = 50V tr Rise Time ––– 2.8 ––– ID = 5.0A td(off) Turn-Off Delay Time ––– 14 ––– ns RG = 6.0Ω tf Fall Time ––– 4.3 ––– VGS = 10V f Ciss Input Capacitance ––– 530 ––– VGS = 0V Coss Output Capacitance ––– 110 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 29 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 510 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 67 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 130 ––– VGS = 0V, VDS = 0V to 80V g
Avalanche Characteristics Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd ––– 11 mJ IAR Avalanche Currentc ––– 5.0 A
Diode Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current ––– ––– 38 MOSFET symbol (Body Diode) A showing the G ISM Pulsed Source Current ––– ––– 34 integral reverse S (Body Diode)c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.0A, VGS = 0V f trr Reverse Recovery Time ––– 31 ––– ns TJ = 25°C, IF = 5.0A, VDD = 25V Qrr Reverse Recovery Charge ––– 37 ––– nC di/dt = 100A/µs f
Notes:
† Used double sided cooling , mounting pad.  Repetitive rating; pulse width limited by ‡ Mounted on minimum footprint full size board with max. junction temperature. metalized back and with small clip heatsink. ‚ Starting TJ = 25°C, L = 0.89mH, RG = 25Ω, IAS = 5.0A. ˆ T ƒ C measured with thermal couple mounted to top Surface mounted on 1 in. square Cu board. (Drain) of part. „ Pulse width ≤ 400µs; duty cycle ≤ 2%. ‰ Rθ is measured at T … J of approximately 90°C. Coss eff. is a fixed capacitance that gives the same Š Based on testing done using a typical device & evaluation board charging time as Coss while VDS is rising from 0 to 80% VDSS. at Vbus=±45V, fSW=400KHz, and TA=25°C. The delta case temperature ∆TC is 55°C. 2 www.irf.com