Datasheet IRG4PH50UDPbF (Infineon) - 3
| Fabricante | Infineon |
| Descripción | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Páginas / Página | 11 / 3 — Fig. 1. Fig. 2. Fig. 3 |
| Revisión | 01_00 |
| Formato / tamaño de archivo | PDF / 693 Kb |
| Idioma del documento | Inglés |
Fig. 1. Fig. 2. Fig. 3
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IRG4PH50UDPbF 30 F o r b o th : 25 D u ty c yc le : 50 % T J = 1 2 5° C T = 9 0 °C sink 20 G a te d riv e a s s pe c ified P o w er D is s ipa tio n = 40W S qua re w av e: 15 60% of rated voltage 10 I LOAD CURRENT (A) 5 Id e a l d io d e s 00.1 1 10 100 f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 100 100 T = 150 C o J T = 150 C o J 10 10 T = 25 C o J T = 25 C o J I , Collector-to-Emitter Current (A) C C V = 15V I , Collector-to-Emitter Current (A) GE V = 50V CC 20µs PULSE WIDTH 5µs PULSE WIDTH 1 1 1 10 5 6 7 8 9 10 11 12 V , Collector-to-Emitter Voltage (V) CE V , Gate-to-Emitter Voltage (V) GE
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics www.irf.com 3
Fig. 1
- Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 100 100 T = 150 C o J T = 150 C o J 10 10 T = 25 C o J T = 25 C o J I , Collector-to-Emitter Current (A) C C V = 15V I , Collector-to-Emitter Current (A) GE V = 50V CC 20µs PULSE WIDTH 5µs PULSE WIDTH 1 1 1 10 5 6 7 8 9 10 11 12 V , Collector-to-Emitter Voltage (V) CE V , Gate-to-Emitter Voltage (V) GE
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics www.irf.com 3